Datasheet > WTM1624

WTM1624

更新时间： 2022-12-16 10:25:34

品牌	Logo	应用领域
WEITRON		晶体晶体管局域网
页数	文件大小	规格书
4页	1257K
描述
NPN EPITAXIAL PLANAR TRANSISTOR

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中文翻译

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数据手册

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WTM1624 数据手册

WTM1624

NPN EPITAXIAL PLANAR TRANSISTOR

P b

Lead(Pb)-Free

1. BASE

2. COLLECTOR

3. EMITTER

Description

The WTM1624 applies to voltage regulators,

relay drivers,lamp drivers,and electrical equipment.

SOT-89

Features

Adoption of FBET, MBIT processes

Low collector-to-emitter saturation voltage

Fast switching speed

Large current capacity and wide ASO

Absolute Maximum Ratings at T = 25

Parameter

Symbol

Ratings

Unit

Junction Temperature

+150

Storage Temperature

Tstg

-55~+150

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current (DC)

Collector Current (Pulse) (Note1)

CBO

VCEO

EBO

Total Power Dissipation

0.5

Note 1: Single pulse, PW=10ms

Electrical Characteristics (Ta = 25 , unless otherwise stated)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

BVCEO

BVEBO

100

0.5

1.2

560

=10uA , I

=1mA, IB

E=10uA ,IC

CBO

CB=40V, I

EB=4V, IC

EBO

*VCE(sat)

*VBE(sat)

*hFE

0.19

0.94

=2A, I

=100mA

C=2A, I

CE=2V, I

=100mA

CE=10V, I =50mA

CB=10V, IE=0, f=1MHz

150

MHz

Cob

tstg

650

See test circuit

*Measured under pulse condition. Pulse widthﬁ380ﬂs, Duty Cycleﬁ2%

Classification of hFE

Rank

Range

100 - 200

140 - 280

200 - 400

280 - 560

WEITRON

http://www.weitron.com.tw

1/4

28-Dec-07

12 3 4

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