Datasheet > WTL2622

WTL2622

更新时间： 2024-09-18 03:15:59

品牌	Logo	应用领域
WEITRON		/
页数	文件大小	规格书
6页	544K
描述
Dual N-Channel Enhancement Mode MOSFET

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数据手册

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WTL2622 数据手册

WTL2622

6 DRAIN

Dual N-Channel Enhancement

Mode MOSFET

DRAIN CURRENT

2.5 AMPERES

P b

Lead(Pb)-Free

DRAIN SOURCE VOLTAGE

20 VOLTAGE

1 GATE

2 SOURCE

4 DRAIN

Features:

*Super High Dense Cell Design For Low R

DS(ON)

< 80mΩ@V =4.5V

DS(ON)

*Rugged and Reliable

*Capable of 2.5V Gate Drive

*Simple Drive Requirement

*SOT-26 Package

SOT-26

3 GATE

5 SOURCE

Maximum Ratings (T =25˚C Unless Otherwise Speciﬁed)

Rating

Symbol

Value

Unit

Drain-Source Voltage

±10

2.5

Gate-Source Voltage

Continuous Drain Current¹, V @4.5V, T =25˚C

-Pulsed²

Drain-Source Diode Forward Current¹

1.25

Total Power Dissipation¹(T =25˚C)

˚C/W

˚C

Maximum Junction-ambient¹

125

θJA

Operating Junction and Storage Temperature Range

T ,T

-55~+150

stg

Device Marking

WTL2622=STS2622

WEITRON

http:www.weitron.com.tw

19-Sep-05

1/6

12 3 4 5 6

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