Datasheet > WTF12A60-S

WTF12A60-S

更新时间： 2024-10-30 07:20:11

品牌	Logo	应用领域
稳先微 - WINSEMI		/
页数	文件大小	规格书
5页	452K
描述
Bi-Directional Triode Thyristor

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中文翻译

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WTF12A60-S 数据手册

WTF12A60-S

Bi-Directional Triode Thyristor

Features

�

Repetitive Peak off -State Voltage:600V

R.M.S On-State Current(I_T(RMS)=12A)

Isolation voltage(V_ISO=1500V AC)

High Commutation dv/dt

General Description

General purpose switching and phase control applications .These devices

are intented to be interfaced directly to mirocontrollers,logic integrated

circuits and other low power gate trigger circuits such as fan speed and

temperature modulation control,lighting control and static switching relay.

By using an internal ceramic pad, the TO220F series provides voltage

insulated tab (rated at 2500V RMS) complying with UL standards (file

ref.:E347423)

Absolute Maximum Ratings (T_J=25℃ unless otherwise specified)

symbol

V_DRM

I_T(RMS)

I_TSM

Parameter

Peak Repetitive Forward Blocking Voltage(gate open) (Note1)

Forward Current RMS(All Conduction Angles, T_J=58℃)

Peak Forward Surge Current, (1/2 Cycle, Sine Wave,50/60Hz)

Circuit Fusing Considerations (tp=10ms)

Ratings Units

600

119/130

I²t

A²s

P_GM

Peak Gate Power —Forward,(T_C=58℃,Pulse With≤1.0us)

Average Gate Power —Forward,(Over any 20ms period)

Peak Gate Current—Forward,T_J=125℃(20µs,120PPS)

Peak Gate Voltage—Reverse,TJ=125℃(20µs,120PPS)

Junction Temperature

P_G(AV)

I_FGM

0.5

V_RGM

T_J

-40~125

-40~150

℃

T_stg

Storage Temperature

Note1.Although not recommended off -state voltages up to 800v ,may be applied with out damage, but the TRIAC may

switch, to the on-state .the rate of rise of current should not exceed 3A/us.

Thermal Characteristics

Symbol

R_ӨJC

Parameter

Value

3.3

Units

℃/W

Thermal Resistance Junction to case

R_ӨJA

Thermal resistance Junction to Ambient

120

Rev.A Oct.2011

12 3 4 5

中文翻译

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