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WTF12A60 PDF预览

WTF12A60

更新时间: 2024-10-30 07:20:11
品牌 Logo 应用领域
稳先微 - WINSEMI /
页数 文件大小 规格书
6页 486K
描述
Bi-Directional Triode Thyristor

WTF12A60 数据手册

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WTF12A60  
Bi-Directional Triode Thyristor  
Features  
Repetitive Peak off -State Voltage:600V  
R.M.S On-State Current(IT(RMS)=12A)  
Isolation voltage(VISO=1500V AC)  
High Commutation dv/dt  
Halogen free(WTF12A60-HF)  
General Description  
General purpose switching and phase control applications .These devices  
are intented to be interfaced directly to mirocontrollers,logic integrated  
circuits and other low power gate trigger circuits such as fan speed and  
temperature modulation control,lighting control and static switching relay.  
By using an internal ceramic pad, the TO220F series provides voltage  
insulated tab (rated at 2500V RMS) complying with UL standards (file  
ref.:E347423)  
Absolute Maximum Ratings (TJ=25℃ unless otherwise specified)  
symbol  
VDRM  
IT(RMS)  
ITSM  
Parameter  
Peak Repetitive Forward Blocking Voltage(gate open) (Note1)  
Forward Current RMS(All Conduction Angles, TJ=58℃)  
Peak Forward Surge Current, (1/2 Cycle, Sine Wave,50/60Hz)  
Circuit Fusing Considerations (tp=10ms)  
Ratings Units  
600  
V
12  
A
119/130  
71  
A
I2t  
A2s  
W
W
A
PGM  
Peak Gate Power —Forward,(TC=58,Pulse With≤1.0us)  
Average Gate Power —Forward,(Over any 20ms period)  
Peak Gate Current—Forward,TJ=125℃(20µs,120PPS)  
Peak Gate Voltage—Reverse,TJ=125(20µs,120PPS)  
Junction Temperature  
5
PG(AV)  
IFGM  
0.5  
2
VRGM  
TJ  
10  
V
-40~125  
-40~150  
Tstg  
Storage Temperature  
Note1.Although not recommended off -state voltages up to 800v ,may be applied with out damage, but the TRIAC may  
switch, to the on-state .the rate of rise of current should not exceed 3A/us.  
Thermal Characteristics  
Symbol  
RӨJC  
Parameter  
Value  
3.3  
Units  
℃/W  
℃/W  
Thermal Resistance Junction to case  
RӨJA  
Thermal resistance Junction to Ambient  
120  
Rev.A May.2011  
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.  

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