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2KBP005M PDF预览

2KBP005M

更新时间: 2024-01-13 13:40:14
品牌 Logo 应用领域
WTE 整流二极管桥式整流二极管
页数 文件大小 规格书
3页 39K
描述
2.0A GLASS PASSIVATED BRIDGE RECTIFIER

2KBP005M 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:R-PSIP-W4Reach Compliance Code:unknown
风险等级:5.63最小击穿电压:50 V
配置:BRIDGE, 4 ELEMENTS二极管元件材料:SILICON
二极管类型:BRIDGE RECTIFIER DIODEJESD-30 代码:R-PSIP-W4
最大非重复峰值正向电流:60 A元件数量:4
相数:1端子数量:4
最高工作温度:165 °C最低工作温度:-55 °C
最大输出电流:2 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):NOT SPECIFIED最大重复峰值反向电压:50 V
表面贴装:NO端子形式:WIRE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

2KBP005M 数据手册

 浏览型号2KBP005M的Datasheet PDF文件第2页浏览型号2KBP005M的Datasheet PDF文件第3页 
WTE  
PO WER SEMICONDUCTORS  
2KBP005M – 2KBP10M  
2.0A GLASS PASSIVATED BRIDGE RECTIFIER  
Features  
!
Glass Passivated Die Construction  
!
!
!
!
!
Low Forward Voltage Drop  
High Current Capability  
High Reliability  
High Surge Current Capability  
Ideal for Printed Circuit Boards  
L
A
KBP  
Min  
Dim  
A
B
C
D
E
Max  
15.24  
11.68  
B
J
14.22  
10.67  
15.2  
4.57  
3.60  
2.16  
0.76  
1.52  
11.68  
12.7  
+
~
~
-
5.08  
4.10  
2.67  
0.86  
C
K
Mechanical Data  
!
!
G
H
I
Case: Molded Plastic  
H
I
Terminals: Plated Leads Solderable per  
MIL-STD-202, Method 208  
Polarity: As Marked on Body  
Weight: 1.7 grams (approx.)  
Mounting Position: Any  
J
12.7  
E
K
L
!
!
!
!
G
3.2 x 45° Typical  
D
All Dimensions in mm  
Marking: Type Number  
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified  
Single Phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
2KBP 2KBP 2KBP 2KBP 2KBP 2KBP 2KBP  
Characteristic  
Symbol  
Unit  
005M  
01M  
02M  
04M  
06M  
08M  
10M  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
VRRM  
VRWM  
VR  
50  
100  
200  
400  
600  
800  
1000  
V
RMS Reverse Voltage  
VR(RMS)  
IO  
35  
70  
140  
280  
2.0  
420  
560  
700  
V
A
Average Rectified Output Current  
(Note 1)  
@TA = 50°C  
Non-Repetitive Peak Forward Surge Current  
8.3ms Single half sine-wave superimposed on  
rated load (JEDEC Method)  
IFSM  
60  
A
Forward Voltage (per element)  
@IF = 2.0A  
VFM  
IRM  
1.1  
V
Peak Reverse Current  
At Rated DC Blocking Voltage  
@TA = 25°C  
@TA = 100°C  
10  
500  
µA  
Rating for Fusing (t<8.3ms)  
I2t  
Cj  
15  
25  
A2s  
pF  
Typical Junction Capacitance per element (Note 2)  
Typical Thermal Resistance (Note 3)  
RJA  
Tj, TSTG  
30  
K/W  
°C  
Operating and Storage Temperature Range  
-55 to +165  
Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case.  
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.  
3. Thermal resistance junction to ambient mounted on PC board with 12mm2 copper pad.  
2KBP005M – 2KBP10M  
1 of 3  
© 2002 Won-Top Electronics  

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