Datasheet > WTD6A60S

WTD6A60S

更新时间： 2024-10-02 07:20:11

品牌	Logo	应用领域
稳先微 - WINSEMI		/
页数	文件大小	规格书
5页	329K
描述
Bi-Directional Triode Thyristor

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中文翻译

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WTD6A60S 数据手册

WTD6A60S

Bi-Directional Triode Thyristor

Features

�

Repetitive Peak off -State Voltage:600V

R.M.S On-State Current(IT(RMS)=6A)

High Commutation dv/dt

Isolation Voltage (V_ISO=1500V AC)

General Description

This device fully isolated package suitable for AC switching

application,phase control application such as fan speed and

temperature modulation control,lighting control and static

switching relay. This device is approved to comply with applicable

requirements by Underwriters Laboratories Inc.

Absolute Maximum Ratings (T_J=25℃ unless otherwise specified)

symbol

V_DRM

Parameter

Repetitive Peak Off-State Voltage

R.M.S On-State Current

condition

Ratings

600

Units

I_T(RMS)

Tc=89℃

6.0

One Cycle, 50Hz/60Hz,

Peak,Non-Repetitive

I_TSM

Surge On-State Current

60/66

I²t

P_GM

P_G(AV)

I_GM

I²t

3.0

A²s

Peak Gate Power Dissipation

Average Gate Power dissipation

Peak Gate Current

Peak Gate Voltage

0.3

2.0

V_GM

V_ISO

T_J

Isolation Breakdown voltage(R.M.S.) A.C 1 minute

Operating Junction Temperature

Storage Temperature

1500

-40~125

-40~150

2.0

℃

T_STG

Mass

Thermal Characteristics

Symbol

Parameter

Value

Units

R_θJc

Thermal Resistance Junction to Case

3.8

℃/W

Rev.A Aug.2010

12 3 4 5

中文翻译

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