Datasheet > WTD40N03

WTD40N03

更新时间： 2024-10-02 06:02:03

品牌	Logo	应用领域
WEITRON		/
页数	文件大小	规格书
6页	1357K
描述
Surface Mount P-Channel Enhancement Mode POWER MOSFET

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WTD40N03 数据手册

WTD40N03

Surface Mount P-Channel Enhancement

Mode POWER MOSFET

DRAIN CURRENT

-15 AMPERES

DRAIN

P b

Lead(Pb)-Free

DRAIN SOURCE VOLTAGE

-60 VOLTAGE

1 GATE

Features:

*Super High Dense Cell Design For Low RDS(ON)

SOURCE

R_DS(ON)<90m Ω@V_GS=-10V

*Simple Drive Requirement

*Lower On-resistance

1. GATE

2.4 DRAIN

3. SOURCE

*Fast Switching Characteristic

*TO-252 Package

D-PAK / (TO-252)

Maximum Ratings(T =25 C Unless Otherwise Specified)

Rating

Symbol

Value

Unit

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

±±0

Continuous Drain Current, (V @10V, T_C=±5˚C)

-±0

-13

I_D

, (V @10V, T_C=100˚C)

Pulsed Drain Current¹

I_DM

P_D

150

Total Power Dissipation(T_C=±5˚C)

R_θJC

R_θJA

±.5

˚C/W

Thermal Resistance Junction-case

Thermal Resistance Junction-ambient

Operating Junction and Storage Temperature Range

110

˚C/W

˚C

-55~+150

TJ,Tstg

WEITRON

http:www.weitron.com.tw

1/6

12-Jul-07

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