Datasheet > WTC2312

WTC2312

更新时间： 2024-02-21 14:57:11

品牌	Logo	应用领域
WEITRON		/
页数	文件大小	规格书
6页	1341K
描述
N-Channel Enhancement Mode Power MOSFET

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中文翻译

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数据手册

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WTC2312 数据手册

WTC2312

N-Channel Enhancement

Mode Power MOSFET

3 DRAIN

DRAIN CURRENT

4.9 AMPERES

P b

Lead(Pb)-Free

DRAIN SOUCE VOLTAGE

20 VOLTAGE

1 GATE

Features:

* Super High Dense Cell Design For Low R_DS(ON)

2 SOURCE

RDS(ON)<41mΩ @VGS=4.5V

RDS(ON)<47mΩ @VGS=2.5V

RDS(ON)<57mΩ @VGS=1.8V

* Capable of 2.5V gate drive

* Rugged and Reliable

* Lower On-Resistance

SOT-23

Application:

* Power Management in Notebook Computer.

* Portable Equipment.

* Battery Powered System.

Maximum Ratings^(T_A^{=25℃ Unless Otherwise Specified)}

Rating

Symbol

Value

Unit

Drain-Source Voltage

V_DS

V_GS

Gate-Source Voltage

³,V_GS@4.5V(T_A=25°C)

,V_GS@4.5V(T_A=70°C)

Continuous Drain Current

4.9

3.4

I_D

Pulsed Drain Current ^{1, 2}

I_DM

P_D

Total Power Dissipation(TA=25°C)

Maximum Junction-ambient ³

0.75

140

°C/W

°C

R_θJA

Operating Junction Temperature Range

Storage Temperature Range

+150

T_J

T_stg

-55~+150

°C

Device Marking

WTC2312=N12

WEITRON

http://www.weitron.com.tw

1/6

Rev.B 04-Aug-09

12 3 4 5 6

中文翻译

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