Datasheet > WTC2307

WTC2307

更新时间： 2024-02-08 19:09:08

品牌	Logo	应用领域
WEITRON		/
页数	文件大小	规格书
6页	660K
描述
P-Channel Enhancement Mode Power MOSFET

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中文翻译

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数据手册

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WTC2307 数据手册

WTC2307

P-Channel Enhancement

Mode Power MOSFET

DRAIN CURRENT

-4.0 AMPERS

DRAIN

DRAIN SOUCE VOLTAGE

-16 VOLTAGE

GATE

Features:

SOURCE

*Super High Dense Cell Design For Low R_DS(ON)

R_DS(ON)<60mΩ@V_GS=-4.5V

*Rugged and Reliable

*Simple Drive Requirement

*SOT-23 Package

SOT-23

Applications

*Power Management in Notebook Computer

*Portable Equipment

*Battery Powered System

Maximum Ratings^(T_A^{=25℃ Unless Otherwise Specified)}

Rating

Symbol

Value

Unit

Drain-Source Voltage

Gate-Source Voltage

-16

V_DS

V_GS

±8

Continuous Drain Current ³

-4.0

-3.3

-12

(T_A=25˚C)

(T_A=70˚C)

I_D

Pulsed Drain Current

I_DM

P_D

(T_A=25˚C)

Total Power Dissipation

1.38

˚C/W

˚C

Maximum (Thermal Resistance) Junction-ambient ³

Operating Junction and Storage Temperature Range³

R_θJA

-55~+150

T_J,T_stg

Device Marking

WTC2307=2307

WEITRON

http:www.weitron.com.tw

16-May-05

1/6

12 3 4 5 6

中文翻译

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