Datasheet > WTC2306_09

WTC2306_09

更新时间： 2024-09-30 08:07:31

品牌	Logo	应用领域
WEITRON		/
页数	文件大小	规格书
4页	809K
描述
N-Channel Enhancement Mode Power MOSFET

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中文翻译

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数据手册

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WTC2306_09 数据手册

WTC2306

DRAIN

N-Channel Enhancement

Mode Power MOSFET

DRAIN CURRENT

5.8 AMPERES

DRAIN SOURCE VOLTAGE

30 VOLTAGE

P b

Lead(Pb)-Free

GATE

Features:

SOURCE

* Super High Dense Cell Design For Low R (on)

(on) < 38mΩ @ V = 10V

* Rugged and Reliable

* Simple Drive Requirement

* SOT-23 Package

Applications:

SOT-23

* Power Management in Notebook Computer

* Portable Equipment

* Battery Powered System

Maximum Ratings (T

Rating

Symbol

Value

Unit

Drain-Source Voltage

Gate-Source Voltage

±±1

5.8

Continuous Drain Current

Pulsed Drain Current^±

Total Power Dissipation (T =15°C)

Maximum Junction-Ambient²

±.4

±40

°C/W

θJA

-55~+±50

Operating Junction Temperature Range

Storage Temperature Range

°C

-55~+±50

stg

Note: 1. Repetitive Rating: Pulse width limited by the maximum junction temperature

2. 1-in²2oz Cu PCB board

3. Guaranteed by design; not subject to production testing

Device Marking

WTC1306 = N06

WEITRON

http://www.weitron.com.tw

Rev.B 17-Aug-09

1/4

12 3 4

中文翻译

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