Datasheet > WTC2305_09

WTC2305_09

更新时间： 2024-09-30 08:07:31

品牌	Logo	应用领域
WEITRON		/
页数	文件大小	规格书
4页	2362K
描述
P-Channel Enhancement Mode Power MOSFET

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中文翻译

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数据手册

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WTC2305_09 数据手册

WTC2305

P-Channel Enhancement

Mode Power MOSFET

DRAIN CURRENT

-4.2 AMPERES

DRAIN

DRAIN SOURCE VOLTAGE

-30 VOLTAGE

GATE

Features:

SOURCE

*Super High Dense Cell Design For Low R_DS(ON)

R_DS(ON)<70mΩ@V_GS=10V

*Rugged and Reliable

*Simple Drive Requirement

*SOT-23 Package

SOT-23

Applications

*Power Management in Notebook Computer

*Portable Equipment

*Battery Powered System

Maximum Ratings^(T_A^{=25℃ Unless Otherwise Specified)}

Rating

Symbol

Value

-30

Unit

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

V_DS

V_GS

±12

³,(T_A

-4.2

I_D

1,2

Pulsed Drain Current

-30

1.4

I_DM

P_D

Total Power Dissipation(TA=25˚C)

˚C/W

˚C

Maximum Thermal Resistance Junction-ambient³

Operating Junction and Storage Temperature Range

140

R_θJA

-55~+150

T_J,T_stg

Device Marking

WTC2305=PO 5

WEITRON

http//:www.weitron.com.tw

Rev.B 05-Jun-09

1/4

12 3 4

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