Datasheet > WTC2301_10

WTC2301_10

更新时间： 2024-02-06 09:56:28

品牌	Logo	应用领域
WEITRON		/
页数	文件大小	规格书
6页	567K
描述
P-Channel Enhancement Mode Power MOSFET

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中文翻译

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数据手册

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WTC2301_10 数据手册

WTC2301

P-Channel Enhancement

Mode Power MOSFET

DRAIN CURRENT

-2.3 AMPERES

DRAIN

P b

Lead(Pb)-Free

DRAIN SOURCE VOLTAGE

-20 VOLTAGE

GATE

Features:

SOURCE

*Super High Dense Cell Design For Low R_DS(ON)

R_DS(ON)<100mΩ@V_GS=-4.5V

*Rugged and Reliable

*Simple Drive Requirement

*SOT-23 Package

SOT-23

Applications

*Power Management in Notebook Computer

*Portable Equipment

*Battery Powered System

Maximum Ratings^(T_A^{=25℃ Unless Otherwise Specified)}

Rating

Symbol

Value

-20

Unit

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

I_D

±8

Continuous Drain Current ³

-2.3

1,2

Pulsed Drain Current

-8

I_DM

Total Power Dissipation(TA=25˚C)

(TA=75˚C)

0.9

0.57

P_D

Maximum Junction-ambient³

Maximum Junction-case

Ambient Temperature

140

100

150

˚C /W

˚C

R_θJA

R_θJC

T_a

T_c

150

˚C

Case Temperature

Operating Junction Temperature Range

Storage Temperature Range

150

˚C

T_J

T_stg

-55~+150

Device Marking

WTC2301 = 01

WEITRON

http://www.weitron.com.tw

Rev.D 29-Mar-10

1/6

12 3 4 5 6

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