Datasheet > WTAT10N055S

WTAT10N055S

更新时间： 2024-09-28 14:53:43

品牌	Logo	应用领域
先科 - SWST		晶体
页数	文件大小	规格书
7页	565K
描述
功率金氧半电晶体

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中文翻译

获取价格

数据手册

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WTAT10N055S 数据手册

WTAT10N055S-HAF

N-Channel Enhancement Mode MOSFET

Drain

Features

• Low R_DS(ON)

• Halogen and Antimony Free(HAF),

RoHS compliant

Gate

Application

Source

• DC-DC converters

1.Gate 2.Drain 3.Source

TO-220F Plastic Package

Key Parameters

Parameter

V_(BR)DSS

Value

Unit

100

R_DS(ON)Max

V_GS(th)typ

5.5 @ V_GS= 10 V

mΩ

Q_gtyp

75.7 @ V_GS= 10 V

Absolute Maximum Ratings (at T_a= 25℃ unless otherwise specified)

Parameter

Symbol

Value

100

Unit

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

± 20

T_c= 25℃

T_c= 100℃

I_D

Continuous Drain Current

Peak Drain Current, Pulsed ¹⁾

Avalanche Current

I_DM

I_AS

380

Single Pulse Avalanche Energy ²⁾

Power Dissipation

E_AS

℃

344

P_D

36.7

T_c= 25℃

Operating Junction and Storage Temperature Range

T_J, T_stg

- 55 to + 150

Thermal Characteristics

Parameter

Symbol

R_θJC

Max.

3.4

Unit

Thermal Resistance from Junction to Case

Thermal Resistance from Junction to Ambient

¹⁾Pulse Test: Pulse Width ≤ 100 μs, Duty Cycle ≤ 2%, Repetitive rating, pulse width limited by junction temperature T_J(MAX)= 150°C.

²⁾Limited by T_J(MAX), starting T_J= 25 °C, L = 0.5 mH, R_g= 25 Ω, I_AS= 37 A, V_GS= 10 V.

℃

R_θJA

1 / 7

Dated: 25/07/2023 Rev: 01

12 3 4 5 6 7

中文翻译

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