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WT-Z106P-4-12 PDF预览

WT-Z106P-4-12

更新时间: 2024-11-20 08:07:35
品牌 Logo 应用领域
WEITRON 二极管齐纳二极管
页数 文件大小 规格书
1页 149K
描述
Zener Diode Chips for ESD Protection

WT-Z106P-4-12 数据手册

  
WT-Z106P-4-12  
Zener Diode Chips for ESD Protection  
1. Feature:  
1-1 Silicon Zener diode chips for electrostatic discharge(ESD) protection application  
1-2 This specification applies to P-Type silicon Zener diode chipDevice NO:WT-Z106P-4-12  
2. Structure:  
2-1 Planar type: Silicon Diode  
2-2 Electrodes:  
Top side:Aluminum Alloy(Anode).  
Back side:Gold Layer(Cathode).  
3. Size:  
3-1. *Chip size : 6.88 mils x 6.88 mils (175µm x 17.5µm ).  
3-2. Chip thickness : 3.3 ± 0.6 mils (85 ± 15µm ).  
3-3. Active area : 4.1 mils x 4.1 mils (105µm x 105µm).  
3-4. Bonding pad : 4.5 mils x 4.5 mils (115µm x 115µm) .  
3-5. Pattern drawing : Refer to the attached drawing.  
* Including scribing line. The chip size is about 5.9mil(0.150mm) after dicing.  
4. Electrical Characteristics (Ta=25 C)  
Parameter  
Symbol  
Condition  
Min.  
11  
Typ. Max. Unit  
Zener Voltage  
V
Z
I =5mA  
Z
-
-
13  
V
V
Forward Voltage  
0.75  
1.2  
I =20mA  
F
V
f
Reverse Leakage  
Current  
I
-
-
-
R
V =10V  
R
100  
-
nA  
Electrostatic  
Discharge  
HBM  
MIL-STD 883  
KV  
ESD  
8.0  
5. Drawing:  
Bonding pad  
Top side  
P
N-sub  
Back side  
WEITRON TECHNOLOGY CO., LTD.  
TEL:886-2-29148158  
FAX:886-2-29106796  
Http://www.weitron.com.tw  
05-Dec-06  

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