Datasheet > WT-Z106N-AU4

WT-Z106N-AU4

更新时间： 2024-11-24 08:07:35

品牌	Logo	应用领域
WEITRON		二极管齐纳二极管
页数	文件大小	规格书
1页	143K
描述
Zener Diode Chips for ESD Protection

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WT-Z106N-AU4 数据手册

WT-Z106N-AU4

Zener Diode Chips for ESD Protection

1. Feature:

1-1 Silicon Zener diode chips for electrostatic discharge (ESD) protection application

1-2 This speciﬁcation applies to N-Type silicon Zener diode chip Device NO:WT-Z106N-AU4

2. Structure:

2-1 Planar type: N/P Diode

2-2

Electrodes:

Top side:Gold Pad.(Cathode)

Back side:Gold Layer.(Anode)

3. Size:

3-1 Chip size: 6.88 mils x 6.88 mils (175 µm x 175 µm).

3-2 Chip thickness: 3.3 ± 0.6 mils (85 µm ± 15 µm).

3-3 Active area: 4.1 mils x 4.1 mils (105 µm x 105 µm).

3-4 Bonding pad: 4.5 mils x 4.5mils (115 µm x 115 µm).

3-5 Pattern drawing: Refer to the attached drawing.

4. Electrical Characteristics (Ta=25ºC)

Parameter

Symbol

Condition

I_z=5mA

Min.

5.7

Typ.

Max.

6.7

Unit

Zener Voltage

Reverse Leakage

Current

I_R

100

V_R=4V

I_F=20mA

1.2

Forward Voltage

Electrostatic

Discharge

HBM

MIL-STD883

ESD

5. Drawing:

Bonding pad

Back side

Top side

P-sub

WEITRON TECHNOLOGY CO., LTD.

TEL:886-2-29148158

FAX:886-2-29106796

Http://www.weitron.com.tw

24-Nov-05

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