Datasheet > WT-Z105P-AU4

WT-Z105P-AU4

更新时间： 2024-11-20 05:52:11

品牌	Logo	应用领域
WEITRON		二极管齐纳二极管
页数	文件大小	规格书
1页	140K
描述
Zener Diode Chips for ESD Protection

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WT-Z105P-AU4 数据手册

WT-Z105P-AU4

Zener Diode Chips for ESD Protection

1. Feature:

1-1 Silicon Zener diode chips for electrostatic discharge (ESD) protection application

1-2 This speciꢂcation applies to P-Type silicon Zener diode chip Device NO:WT-Z105P-AU4

2. Structure:

2-1 Planar type: P/N Diode

2-2 Electrodes:

Top side:Gold Pad(Anode).

Back side:Gold Layer(Cathode).

3. Size:

3-1.^*Chip size : 5.9 mils x 5.9 mils (150 µm x 150 µm ).

3-2. Chip thickness : 3.3 0.ꢀ mils (ꢁ5 15 µm ).

3-3. Bonding pad : 3.54 mils x 3.54 mils (90 µm x 90 µm) .

3-4. Pattern drawing : Refer to the attached drawing.

*Including scribing line. The chip size is(125 10)²µm²after dicing.

Parameter

Symbol

Condition

Min.

5.7

Typ.

Max.

6.7

Unit

Zener Voltage

Iz=5mA

V_R=4V

100

0.5

Reverse Leakage

Current

V_R=5V

μA

Forward Voltage

IF=20mA

1.2

Electrostatic

Discharge

HBM

MIL-STD883

ESD

8.0

5. Drawing:

6.Protection Circuit

Top View

Bonding pad

Top side

Protection

Zener

LED

N-sub

Back side

WEITRON TECHNOLOGY CO., LTD.

TEL:886-2-29148158

FAX:886-2-29106796

Http://www.weitron.com.tw

03 - Jul - 07

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