Datasheet > WSV10H200D

WSV10H200D

更新时间： 2024-11-22 14:52:19

品牌	Logo	应用领域
先科 - SWST		/
页数	文件大小	规格书
3页	286K
描述
肖特基整流管

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中文翻译

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数据手册

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WSV10H200D 数据手册

WSV10H200D,WSAT10H200D,WSCT10H200D,WSR10H200D-HAF

Trench Schottky Barrier Rectifiers

WSV10H200D

WSAT10H200D

Reverse Voltage - 200 V

Forward Current - 10 A

Features

• Low forward voltage drop, low power losses

• High efficiency operation

1.Anode 2.Cathode 3.Anode

TO-263 Plastic Package

1.Anode 2.Cathode 3.Anode

TO-220F Plastic Package

• Halogen and Antimony Free(HAF), RoHS compliant

WSCT10H200D

WSR10H200D

Applications

• For use in high frequency converters

• Switching power supplies

1.Anode 2.Cathode 3.Anode

TO-220FB Plastic Package

TO-252 Plastic Package

Absolute Maximum Ratings (T_a= 25℃ unless otherwise specified)

Parameter

Symbol

V_RRM

Value

200

Unit

Maximum Repetitive Peak Reverse Voltage

Average Rectified Forward Current

I_F(AV)

Peak Forward Surge Current 8.3 ms Single half sine-

wave Superimposed on Rated Load (JEDEC Method)

I_FSM

100

175

Junction Temperature

T_j

℃

Storage Temperature Range

T_stg

- 50 to + 175

℃

Thermal Characteristics (at T_a= 25℃ unless otherwise specified)

WSV10 WSAT10 WSCT10 WSR10

Parameter

Symbol

R_θJC

Unit

H200D

H200D H200D

Typical Thermal Resistance-Junction to Case

2.6

℃/W

Electrical Characteristics (at T_a= 25℃ unless otherwise specified)

Parameter

Symbol

Min.

Max.

Unit

Forward Voltage

at I_R= 50 µA

V_BR

200

Forward Voltage

at I_F= 2 A

at I_F= 3 A

at I_F= 5 A

at I_F= 10 A

0.76

0.8

0.85

0.93

0.71

0.81

V_F

at I_F= 5 A , Tj = 125℃

at I_F= 10 A , Tj = 125℃

DC Reverse Current

at V_R= 200 V

I_R

µA

1 / 3

Dated: 28/09/2020 Rev:01

12 3

中文翻译

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