Datasheet > WSR10U100D

WSR10U100D

更新时间： 2024-11-07 14:51:15

品牌	Logo	应用领域
先科 - SWST		/
页数	文件大小	规格书
3页	293K
描述
肖特基整流管

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中文翻译

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数据手册

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WSR10U100D 数据手册

WSV10U100D, WSAT10U100D, WSCT10U100D, WSR10U100D-HAF

Silicon Epitaxial Trench Schottky Barrier Rectifiers

Reverse Voltage - 100 V

WSAT10U100D

WSV10U100D

Forward Current - 10 A

Features

• Low forward voltage drop, low power losses

• High efficiency operation

• Halogen and Antimony Free(HAF), RoHS compliant

1.Anode 2.Cathode 3.Anode

TO-263 Plastic Package

1.Anode 2.Cathode 3.Anode

TO-220F Plastic Package

Applications

WSCT10U100D

WSR10U100D

• For use in high frequency converters

• Switching power supplies

• Freewheeling diodes

• OR-ing diode

• DC/DC converters and reverse battery protection.

1.Anode 2.Cathode 3.Anode

TO-252 Plastic Package

TO-220FB Plastic Package

Absolute Maximum Ratings (T_a= 25℃ unless otherwise specified)

Parameter

Symbol

V_RRM

Value

100

Unit

Maximum Repetitive Peak Reverse Voltage

Average Rectified Forward Current

I_F(AV)

Peak Forward Surge Current 8.3 ms Single half sine-

wave Superimposed on Rated Load (JEDEC Method)

I_FSM

120

150

Junction Temperature

T_j

℃

Storage Temperature Range

T_stg

- 55 to + 150

℃

Thermal Characteristics (at T_a= 25℃ unless otherwise specified)

WSAT10

U100D

WSV10

WSCT10 WSR10

Parameter

Symbol

R_θJC

Unit

U100D

4.5

U100D

4.5

U100D

5.8

7.5

Typical Thermal Resistance-Junction to Case

℃/W

Electrical Characteristics (at T_a= 25℃ unless otherwise specified)

Parameter

Symbol

Min.

100

Max.

Unit

Forward Voltage

at I_R= 10 µA

V_BR

Forward Voltage

at I_F= 2 A

at I_F= 3 A

at I_F= 5 A

at I_F= 10 A

0.51

0.56

0.64

0.81

V_F

DC Reverse Current

at V_R= 100 V

I_R

100

µA

1 / 3

Dated: 25/07/2020 Rev:01

12 3

中文翻译

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