WSV10H200S,WSAT10H200S,WSCT10H200S,WSR10H200S-HAF
Silicon Epitaxial Trench Schottky Barrier Rectifiers
Reverse Voltage - 200 V
Forward Current - 10 A
WSAT10H200S
WSV10H200S
Features
2
• Low forward voltage drop, low power losses
• High efficiency operation
1
3
• Halogen and Antimony Free(HAF), RoHS compliant
1.Anode 2.Cathode 3.Anode
TO-263 Plastic Package
1.Anode 2.Cathode 3.Anode
TO-220F Plastic Package
Applications
WSR10H200S
WSCT10H200S
• For use in high frequency converters
• Switching power supplies
1.Anode 2.Cathode 3.Anode
1.Anode 2.Cathode 3.Anode
TO-252 Plastic Package
TO-220FB Plastic Package
Absolute Maximum Ratings (Ta = 25℃ unless otherwise specified)
Parameter
Symbol
VRRM
Value
200
10
Unit
V
Maximum Repetitive Peak Reverse Voltage
Average Rectified Forward Current
IF(AV)
A
Peak Forward Surge Current 8.3 ms Single half sine-
wave Superimposed on Rated Load (JEDEC Method)
IFSM
160
175
A
Junction Temperature
Tj
℃
Storage Temperature Range
Tstg
- 55 to + 150
℃
Thermal Characteristics (at Ta = 25℃ unless otherwise specified)
WSV10 WSAT10 WSCT10 WSR10
Parameter
Symbol
RθJC
Unit
H200S
H200S
3.5
H200S
3
H200S
4.5
4.5
Typical Thermal Resistance-Junction to Case
℃/W
Electrical Characteristics (at Ta = 25℃ unless otherwise specified)
Parameter
Symbol
Min.
Max.
Unit
Forward Voltage
at IR = 50 µA
VBR
200
-
V
Forward Voltage
at IF = 2 A
at IF = 3 A
-
-
-
-
-
-
0.72
0.76
0.8
0.87
0.91
0.97
at IF = 5 A
VF
V
at IF = 10 A
at IF = 15 A
at IF = 20 A
DC Reverse Current
at VR = 200 V
IR
-
50
µA
1 / 3
®
Dated: 07/08/2020 Rev:01