Datasheet > WSJT65R075DW

WSJT65R075DW

更新时间： 2024-10-15 18:09:15

品牌	Logo	应用领域
瑞能 - WEEN		/
页数	文件大小	规格书
12页	621K
描述
WSJT65R075DW is a high voltage N-channel MOSFET in TO247 package, which utilizes the advanced super-junction technology to provide superior FOM RDS(on)*Qg among silicon based MOSFETs. It is particularly suitable for applications require extreme high efficiency and power density

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WSJT65R075DW 数据手册

WSJT65R075DW

Super-Junction Power MOSFET

Rev.01 - 05 December 2023

Product data sheet

1. General description

WSJT65R075DW is a high voltage N-channel

MOSFET in TO247 package, which utilizes

the advanced super-junction technology to

provide superior FOM RDS(on)*Qg among

silicon based MOSFETs. It is particularly

suitable for applications require extreme high

eﬃciency and power density.

alogen-Free

RoHS

2. Features and beneﬁts

•

Superior FOM RDS(on)*Qg

•

Extremely low switching loss

Integrated ultrafast body diode

• 100% avalanche tested

3. Applications

•

EV charger

•

High eﬃciency power supplies

On board charger

Inverters

4. Quick reference data

Table 1. Quick reference data

Symbol Parameter

Conditions

Notes

Values

Unit

Absolute maximum rating

V_DS

V_GS

I_D

drain-source voltage

gate-source voltage

continuous drain current

power dissipation

650

±30

T_mb= 25 °C

P_tot

T_j

481

°C

Unit

junction temperature

-55 to 150

Typ

Symbol Parameter

Static characteristics

Conditions

Notes Min

Max

R_DS(on)

drain-source on-state

resistance

V_GS= 10 V, I_D= 25 A

mΩ

Dynamic characteristics

Q_G(tot)

E_OSS

total gate charge

I_D= 25 A; V_DS= 400 V; V_GS= 10 V

V_GS= 0 V; V_DS= 0 to 400 V

coss stored erergy

10.7

μJ

12 3 4 5 6 7...12

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