品牌 | Logo | 应用领域 |
瑞能 - WEEN | ![]() |
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页数 | 文件大小 | 规格书 |
12页 | 589K | ![]() |
描述 | ||
WSJM80R200B is a high voltage N-channel MOSFET in TO263 package, which utilizes the advanced super-junction technology to provide superior FOM RDS(on)*Qg among silicon based MOSFETs. It is particularly suitable for applications require extreme high efficiency and power density. |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
WSJM80R200X | WEEN |
获取价格 |
WSJM80R200X is a high voltage N-channel MOSFET in TO220F package, which utilizes the advan |
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WSJT65R075DW | WEEN |
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WSJT65R075DW is a high voltage N-channel MOSFET in TO247 package, which utilizes the advan |
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WSK | VISHAY |
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Power Metal Strip® Resistors, Low Value (down |
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WSK_09 | VISHAY |
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Power Metal Strip® Resistors, Low Value (dow |
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WSK_15 | VISHAY |
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Power Metal Strip® Resistors, Low Value (dow |
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WSK0612 | VISHAY |
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Power Metal Strip® Resistors, High Power, Su |
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WSK0612_15 | VISHAY |
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Power Metal Strip® Resistors, High Power, Su |
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WSK06125L000FEA | VISHAY |
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Power Metal Strip Resistors, High Power, |
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WSK1206 | VISHAY |
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Power Metal Strip? Resistors, High Power, Surface-Mount, 4-Terminal |
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WSK1206...18 High Power | VISHAY |
获取价格 |
Power Metal Strip? Resistors, High Power, Surface-Mount, 4-Terminal |
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