Datasheet > WSJM65R120

WSJM65R120

更新时间： 2024-06-27 12:11:04

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瑞能 - WEEN		/
页数	文件大小	规格书
12页	553K
描述
WSJM65R120 is a high voltage N-channel MOSFET in TO220 package, which utilizes the advanced super-junction technology to provide superior FOM RDS(on) * Qg among silicon based MOSFETs. It is particularly suitable for applications require extreme high efficiency and power density

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WSJM65R120 数据手册

WSJM65R120

Super-Junction Power MOSFET

Rev.01 - 23 February 2024

Product data sheet

1. General description

WSJM65R120 is a high voltage N-channel

MOSFET in TO220 package, which utilizes

the advanced super-junction technology to

provide superior FOM R_DS(on)* Q_gamong

silicon based MOSFETs. It is particularly

suitable for applications require extreme high

eﬃciency and power density.

alogen-Free

RoHS

2. Features and beneﬁts

•

Superior FOM R_DS(on)* Q_g

•

Extremely low switching loss

100% avalanche tested

3. Applications

•

high eﬃciency power supplies

4. Quick reference data

Table 1. Quick reference data

Symbol Parameter

Conditions

Notes

Values

Unit

Absolute maximum rating

V_DS

V_GS

I_D

drain-source voltage

gate-source voltage

continuous drain current

power dissipation

650

±30

T_mb= 25 °C

P_tot

T_j

272

°C

Unit

junction temperature

-55 to 150

Typ

Symbol Parameter

Static characteristics

Conditions

Notes Min

Max

R_DS(on)

drain-source on-state

resistance

V_GS= 10 V, I_D= 15 A

105

120

mΩ

Dynamic characteristics

Q_G(tot)

E_OSS

total gate charge

I_D= 15 A; V_DS= 400 V; V_GS= 10 V

V_GS= 0 V; V_DS= 0 to 400 V

coss stored erergy

6.6

μJ

12 3 4 5 6 7...12

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