Datasheet > WS512K32NV-70G2TMA

WS512K32NV-70G2TMA

更新时间： 2023-07-15 00:00:00

品牌	Logo	应用领域
美高森美 - MICROSEMI		静态存储器
页数	文件大小	规格书
9页	959K
描述
SRAM Module, 512KX32, 70ns, CMOS, CQFP68, QFP-68

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WS512K32NV-70G2TMA 数据手册

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WS512K32V-XXX

*ADVANCED

512Kx32 SRAM 3.3V MODULE

FEATURES

 Access Times of 70, 85, 100, 120ns

 Low Voltage Operation:

• 3.3V ± 10% Power Supply

 Low Power CMOS

 Packaging

• 66-pin, PGA Type, 1.185 inch square, Hermetic Ceramic

HIP (Package 401)

 Built-in Decoupling Caps and Multiple Ground Pins for Low

• 68 lead, Hermetic CQFP (G2T), 22.4mm (0.880 inch),

4.57mm (0.180") high (Package 510). Designed to ﬁt

JEDEC 68 lead 0.990" CQFJ footprint

Noise Operation

 Weight

• WS512K32V-XG2TX - 8 grams typical

WS512K32V-XHX - 13 grams typical

 Organized as 512Kx32; User Conﬁgurable as 1024Kx16 or

2Mx8

 Commercial, Industrial and Military Temperature Ranges

 TTL Compatible Inputs and Outputs

* This product is under development, is not qualiﬁed or characterized and is subject to change or

cancellation without notice.

Pin Description

PIN CONFIGURATION FOR WS512K32NV-XHX

Top View

I/O_0-31

A_0-18

Data Inputs/Outputs

Address Inputs

Write Enables

Chip Selects

WE_1-4

CS_1-4

OE#

V_CC

I/O8

I/O9

I/O10

A13

WE2#

CS²#

GND

I/O¹¹

A10

I/O15

I/O14

I/O13

I/O12

OE#

A¹⁸

I/O24

I/O25

I/O26

VCC

CS4#

WE⁴#

I/O²⁷

I/O31

I/O30

I/O29

I/O28

Output Enable

Power Supply

Ground

GND

Not Connected

A14

A15

A11

Block Diagram

A16

A12

WE1#

I/O⁷

A⁸

4 4

WE # CS #

A17

VCC

WE3#

CS³#

GND

I/O¹⁹

I/O23

I/O22

I/O21

I/O20

OE#

A_0-18

I/O0

I/O1

I/O2

CS1#

I/O6

I/O16

I/O17

I/O18

512K x 8

I/O5

I/O³

I/O4

I/O_0-7

I/O_8-15

I/O_16-23

I/O_24-31

Microsemi Corporation reserves the right to change products or speciﬁcations without notice.

Rev. 3

Microsemi Corporation • (602) 437-1520 • www.microsemi.com

12 3 4 5 6 7...9

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