Datasheet > 存储 > SRAM> WS512K32-120G2IEA

WS512K32-120G2IEA

更新时间： 2024-12-01 13:15:35

品牌	Logo	应用领域
WEDC		存储内存集成电路静态存储器
页数	文件大小	规格书
6页	266K
描述
SRAM Module, 2MX8, 120ns, CMOS, CQMA68,

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WS512K32-120G2IEA 数据手册

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WS512K32-XXX

White Electronic Designs

512Kx32 SRAM MODULE, SMD 5962-94611

FEATURES

■

Access Times of 70, 85, 100, 120ns

■

5V Power Supply

Low Power CMOS

■

Packaging

• 68 lead, Hermetic CQFP (G2T)¹, 22.4mm (0.880

inch) square. 4.57mm (0.180 inch) high (Package

509)

Built-in Decoupling Caps and Multiple Ground Pins

for Low Noise Operation

■

Weight

■

Organized as 512Kx32, User Conﬁgurable as

1Mx16 or 2Mx8

• WS512K32-XG2TX¹- 8 grams typical

Commercial, Industrial and Military Temperature

Ranges

Note 1: Package Not Recommended for New Designs.

This product is subject to change without notice.

TTL Compatible Inputs and Outputs

FIGURE 1 – PIN CONFIGURATION FOR WS512K32-XG2TX¹

TOP VIEW

PIN DESCRIPTION

I/O0-31 Data Inputs/Outputs

A0-18 Address Inputs

WE#1-4 Write Enables

CS#1-4 Chip Selects

68 67 66 65 64 63 62 61

I/O

I/O16

I/O17

I/O18

I/O19

I/O20

I/O21

I/O22

I/O23

GND

I/O24

I/O25

I/O26

I/O27

I/O28

I/O29

I/O30

I/O31

OE#

V_CC

GND

Output Enable

Power Supply

Ground

Not Connected

GND

I/O8

I/O9

I/O10

I/O11

I/O12

I/O13

I/O14

I/O15

BLOCK DIAGRAM

WE#

CS#

WE#

CS#

4 4

WE# CS#

WE#

2 2

CS#

OE#

A_0-18

27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43

512K x 8

I/O^16-23

I/O^24-31

I/O^0-7

I/O^8-15

Note 1: Package Not Recommended for New Designs.

March 2005

Rev. 4

White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com

12 3 4 5 6

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