WS1M8-XXX
HI-RELIABILITY PRODUCT
2x512Kx8 DUALITHIC™ SRAM
FEATURES
■ Access Times 17, 20, 25, 35, 45, 55ns
■ Organized as two banks of 512Kx8
■ Revolutionary, Center Power/Ground Pinout
■ Commercial, Industrial and Military Temperature Ranges
■ 5 Volt Power Supply
■ Packaging:
• 32 pin, Hermetic Ceramic DIP (Package 300)
• 36 lead Ceramic SOJ (Package 100)
• 36 lead Ceramic Flatpack (Package 226)
■ Low Power CMOS
■ TTL Compatible Inputs and Outputs
PIN CONFIGURATION FOR WS1M8-XDJX
AND WS1M8-XFX
PIN CONFIGURATION FOR WS1M8-XCX
32 DIP
36 CSOJ
36 FLATPACK
TOP VIEW
TOP VIEW
A18
A16
A14
A12
A7
1
32
VCC
A0
A1
1
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
20
19
NC
2
31 A15
30 A17
29 WE
28 A13
27 A8
2
A18
A17
A16
A15
OE
3
A2
3
4
A3
4
5
A4
5
A6
6
CS1
I/O0
I/O1
6
A5
7
26 A9
7
I/O7
I/O6
GND
A4
8
25 A11
24 CS2
23 A10
22 CS1
21 I/O7
20 I/O6
19 I/O5
18 I/O4
17 I/O3
8
A3
9
VCC
9
A2
10
11
12
13
14
15
16
GND
I/O2
I/O3
WE
A5
10
11
12
13
14
15
16
17
18
VCC
A1
I/O5
I/O4
A14
A13
A12
A11
A10
CS2
A0
I/O0
I/O1
I/O2
GND
A6
A7
A8
A9
PIN DESCRIPTION
PIN DESCRIPTION
A0-18
Address Inputs
Data Input/Output
Chip Selects
Output Enable
Write Enable
+5.0V Power
Ground
A0-18
Address Inputs
Data Input/Output
Chip Selects
Write Enable
+5.0V Power
Ground
I/O0-7
CS1-2
OE
WE
VCC
I/O0-7
CS1-2
WE
VCC
GND
GND
BLOCK DIAGRAM
BLOCK DIAGRAM
I/O0-7
I/O0-7
WE
OE
0-18
WE
0-18
A
A
512K x 8
512K x 8
512K x 8
512K x 8
CS1(1)
CS2(1)
CS1(1)
CS2(1)
NOTE:
1. CS1 and CS2 are used to select the lower and upper 512Kx8 of the device. CS1 and CS2 must not be enabled at the same time.
1
October 2000 Rev. 4
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com