Datasheet > 存储 > SRAM> WS128K32N-45G2TQEA

WS128K32N-45G2TQEA

更新时间： 2024-02-20 05:45:46

品牌	Logo	应用领域
WEDC		内存集成电路静态存储器
页数	文件大小	规格书
6页	325K
描述
128Kx32 SRAM MULTICHIP PACKAGE, RADIATION TOLLERANT

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

WS128K32N-45G2TQEA 数据手册

浏览型号WS128K32N-45G2TQEA的Datasheet PDF文件第2页

浏览型号WS128K32N-45G2TQEA的Datasheet PDF文件第3页

浏览型号WS128K32N-45G2TQEA的Datasheet PDF文件第4页

浏览型号WS128K32N-45G2TQEA的Datasheet PDF文件第5页

浏览型号WS128K32N-45G2TQEA的Datasheet PDF文件第6页

WS128K32-XG2TXE

White Electronic Designs

ADVANCED*

128Kx32 SRAM MULTICHIP PACKAGE, RADIATION TOLLERANT

FEATURES

ꢀ

Access Times of 35, 45, 55ns

Packaging

ꢀ

TTL Compatible Inputs and Outputs

Built in Decoupling Caps and Multiple Ground Pins

for Low Noise Operation

• 68 lead, 22.4mm CQFP (G2T), 4.57mm (0.180"),

(Package 509)

ꢀ

Weight

ꢀ

Organized as 128Kx32; User Conﬁgurable as

256Kx16 or 512Kx8

WS128K32-XG2TXE – 8 grams typical

Radiation tolerant with epitaxial layer on die.

6T memory cells provide excellent protection

against soft errors

ꢀ

Low Power Data Retention

Commercial, Industrial and Military Temperature

Ranges

ꢀ

5V Power Supply

Low Power CMOS

* This product is under development, is not qualiﬁed or characterized and is subject to

change or cancellation without notice.

FIGURE 1 – PIN CONFIGURATION FOR WS128K32N-XG2TXE

Top View

Pin Description

I/O_0-31

A_0-16

Data Inputs/Outputs

Address Inputs

Write Enables

Chip Selects

Output Enable

Power Supply

Ground

68 67 66 65 64 63 62 61

60 I/O₁₆

WE_1-4

I/O₀10

I/O₁11

I/O₂12

I/O₃13

I/O₄14

I/O₅15

I/O₆16

I/O₇17

GND 18

I/O₈19

I/O₉20

I/O₁₀21

I/O₁₁22

I/O₁₂23

I/O₁₃24

I/O₁₄25

I/O₁₅26

CS_1-4

OE#

V_CC

59 I/O₁₇

58 I/O₁₈

57 I/O₁₉

56 I/O₂₀

55 I/O₂₁

54 I/O₂₂

53 I/O₂₃

52 GND

51 I/O₂₄

50 I/O₂₅

49 I/O₂₆

48 I/O₂₇

47 I/O₂₈

46 I/O₂₉

45 I/O₃₀

44 I/O₃₁

GND

The White 68 lead G2T CQFP ﬁlls

the same ﬁt and function as the

JEDEC 68 lead CQFJ or 68 PLCC.

But the G2T has the TCE and lead

inspection advantage of the CQFP

form.

Not Connected

Block Diagram

4 4

WE # CS #

OE#

0-16

2728 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43

128K x 8

I/O^0-7

I/O^8-15

I/O^16-23

I/O^24-31

December 2000

Rev. 0

White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com

12 3 4 5 6

中文翻译

下载PDF

与WS128K32N-45G2TQEA相关器件

型号	品牌	获取价格	描述	数据表
WS128K32N-45G2UCA	MICROSEMI	获取价格	Standard SRAM
WS128K32N-45G2UIA	MICROSEMI	获取价格	Standard SRAM
WS128K32N-45G2UM	MICROSEMI	获取价格	Standard SRAM
WS128K32N-45G2UQ	MICROSEMI	获取价格	Standard SRAM
WS128K32N-45G2UQA	MICROSEMI	获取价格	Standard SRAM
WS128K32N-45G4IE	WEDC	获取价格	SRAM Module, 512KX8, 45ns, CMOS, CQFP68, 40 MM, HERMETIC SEALED, CERAMIC, QFP-68
WS128K32N-45G4QE	WEDC	获取价格	SRAM Module, 512KX8, 45ns, CMOS, CQFP68, 40 MM, HERMETIC SEALED, CERAMIC, QFP-68
WS128K32N-45G4TIA	MICROSEMI	获取价格	Standard SRAM, 128KX32, 45ns, CMOS, CQFP68, QFP-68
WS128K32N-45G4TM	MICROSEMI	获取价格	Standard SRAM, 128KX32, 45ns, CMOS, CQFP68, QFP-68
WS128K32N-45G4TMA	MICROSEMI	获取价格	Standard SRAM, 128KX32, 45ns, CMOS, CQFP68, QFP-68