Datasheet > WPR65N430K

WPR65N430K

更新时间： 2024-11-07 14:54:39

品牌	Logo	应用领域
先科 - SWST		晶体
页数	文件大小	规格书
7页	578K
描述
功率金氧半电晶体

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数据手册

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WPR65N430K 数据手册

WPR65N430K-HAF

N-Channel Enhancement Mode MOSFET

Drain

Features

• Surface-mounted package

• Halogen and Antimony Free(HAF),

Gate

RoHS compliant

• Built-in G-S Protection Diode

• Typical ESD Protection HBM Class 2

1.Gate 2.Drain 3.Source

TO-252 Plastic Package

Source

Classification Voltage Range(V)

< 125

125 to < 250

250 to < 500

500 to < 1000

1000 to < 2000

2000 to < 4000

4000 to < 8000

≥ 8000

Key Parameters

Parameter

BV_DSS

Value

650

Unit

R_DS(ON)Max

V_GS(th)typ

Q_gtyp

430 @ V_GS= 10 V

2.9

mΩ

18.4 @ V_GS= 10 V

Absolute Maximum Ratings(at T_a= 25℃ unless otherwise specified)

Parameter

Symbol

V_DS

Value

650

Unit

Drain-Source Voltage

Gate-Source Voltage

V_GS

± 30

T_c= 25℃

T_c= 100℃

3.8

Drain Current

I_D

Peak Drain Current, Pulsed ¹⁾

Avalanche Current

I_DM

I_AS

2.1

Single Pulse Avalanche Energy ²⁾

E_AS

174

℃

Power Dissipation

P_D

T_c= 25℃

Operating Junction and Storage Temperature Range

T_J, T_stg

- 55 to + 150

Thermal Characteristics

Parameter

Symbol

R_θJC

Max.

3.4

Unit

Thermal Resistance from Junction to Case

℃

Thermal Resistance from Junction to Ambient ³⁾

¹⁾Pulse Test: Pulse Width ≤ 100 μs, Duty Cycle ≤ 2%, Repetitive rating, pulse width limited by junction temperature T_J(MAX)= 150°C.

²⁾Limited by T_J(MAX), starting T_J= 25 °C, L = 79 mH, R_g= 25 Ω, I_AS= 2.1 A, V_GS= 10 V.

R_θJA

³⁾Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate in still air.

1 / 7

Dated: 30/05/2023 Rev: 02

12 3 4 5 6 7

中文翻译

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