Datasheet > WPPT65N190

WPPT65N190

更新时间： 2024-09-14 14:55:43

品牌	Logo	应用领域
先科 - SWST		晶体
页数	文件大小	规格书
7页	565K
描述
功率金氧半电晶体

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中文翻译

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数据手册

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WPPT65N190 数据手册

WPPT65N190-HAF

N-Channel Enhancement Mode MOSFET

Features

Drain

• Low R_DS(ON)

• Low Gate Charge

• Halogen and Antimony Free(HAF),

RoHS compliant

Gate

Source

TO-247 Plastic Package

1.Gate 2.Drain 3.Source

Applications

• For Flyback topologies for example used in

Chargers, Adapters, Lighting etc.

Key Parameters

Parameter

BV_DSS

Value

Unit

650

190 @ V_GS= 10 V

R_DS(ON)Max

V_GS(th)typ

Q_gtyp

mΩ

45 @ V_GS= 10 V

Absolute Maximum Ratings (at T_a= 25℃ unless otherwise specified)

Parameter

Symbol

Value

650

Unit

V_DS

Drain-Source Voltage

Gate-Source Voltage

V_GS

± 30

T_c= 25℃

7.5

Drain Current

I_D

T_c= 100℃

Peak Drain Current, Pulsed ¹⁾

Avalanche Current

I_DM

I_AS

988

Single Pulse Avalanche Energy ²⁾

℃

E_AS

Power Dissipation

P_D

125

T_c= 25℃

T_J, T_stg

Operating Junction and Storage Temperature Range

- 55 to + 150

Thermal Characteristics

Parameter

Symbol

R_θJC

Typ.

0.8

Max.

Unit

Thermal Resistance from Junction to Case

℃

R_θJA

Thermal Resistance from Junction to Ambient

¹⁾Pulse Test: Pulse Width ≤ 100 μs, Duty Cycle ≤ 2%, Repetitive rating, pulse width limited by junction temperature T_J(MAX)= 150°C.

²⁾Limited by T_J(MAX), starting T_J= 25 °C, L = 79 mH, R_g= 25 Ω, I_AS= 5 A, V_GS= 10 V.

1 / 7

Dated: 03/03/2023 Rev: 03

12 3 4 5 6 7

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