Datasheet > WPM2301

WPM2301

更新时间： 2024-09-21 17:00:51

品牌	Logo	应用领域
韦尔 - WILLSEMI		/
页数	文件大小	规格书
6页	129K
描述
MOSFET

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中文翻译

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WPM2301 数据手册

WPM2301

Single P-Channel,-20V, -2.7A, Power Mosfet

http://www.willsemi.com

Description

The WPM2301 uses advanced trench technology and design to

provide excellent R_DS(ON)with low gate charge. This device is

suitable for use in DC-DC conversion applications. Standard

Product WPM2301 is Pb-free.

Features

9_ꢀ%5ꢁ'66

ꢂ

5_'6ꢀRQꢁꢂ7\Sꢂ

SOT 23

ꢀ20 V

90 m¡ @ ꢀ4.5 V

120 m¡ @ ꢀ2.5 V

Application

ꢀ

Li-Ion Battery Charging

P−Channel MOSFET

High Side DC-DC Conversion Circuits

High Side Drive for Small Brushless DC Motors

Power Management in Portable, Battery Powered Products

Absolute Maximum Ratings ^(TA=25unless otherwise specified)

Steady

State

-20

Parameter

Drain-Source Voltage

Symbol 10 S

_DSꢀ

Unit

Top View

Gate-Source Voltage

V_GS

T_A=25°C

T_A=70°C

T_A=25°C

T_A=70°C

T_A=25°C

T_A=70°C

T_A=25°C

T_A=70°C

-2.7

-2.2

-2.5

-1.9

Drain

Continuous Drain Current ^a

I_D

WT1 M

ꢁꢂꢃꢀ

ꢁꢂꢆꢀ

-2.4

ꢁꢂꢄꢅꢀ

ꢆꢂꢇꢀ

-2.2

Maximum Power Dissipation ^a

Continuous Drain Current ^b

P_D

I_D

Gate Source

-1.9

-1.7

WT1 = Specific Device Code

M= Date Code

ꢁꢂꢄꢀ

ꢆꢂꢇꢀ

ꢁꢂꢆꢀ

ꢆꢂꢈꢀ

Maximum Power Dissipation ^b

Pulsed Drain Current ^c

P_D

I_DM

T_J

Operating Junction Temperature

Lead Temperature

150

260

°C

T_L

Storage Temperature Range

T_stg

-55 to 150

Order information

Shipping

Part Number

Package

SOT23

WPM2301-3/TR

3000Tape&Reel

http;//www.willsemi.com

Page 1

Dec,2011 Ver1 .4

12 3 4 5 6

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