Datasheet > WPM2015-3TR

WPM2015-3TR

更新时间： 2024-10-14 12:03:51

品牌	Logo	应用领域
TYSEMI		/
页数	文件大小	规格书
3页	160K
描述
Single P-Channel, -20V, -2.4A, Power MOSFET Excellent ON resistance for higher DC current

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WPM2015-3TR 数据手册

Product specification

WPM2015

Single P-Channel, -20V, -2.4A, Power MOSFET

V_DS(V)

Rds(on) (ȍ)

0.081@ V_GS=ꢀ4.5V

0.103@ V_GS=ꢀ2.5V

-20

SOT-23

Descriptions

The WPM2015 is P-Channel enhancement

MOS Field Effect Transistor. Uses advanced trench

technology and design to provide excellent R_{DS (ON)}

with low gate charge. This device is suitable for use

in DC-DC conversion, power switch and charging

circuit. Standard Product WPM2015 is Pb-free and

Halogen-free.

Pin configuration (Top view)

Features

WT1*

Trench Technology

Supper high density cell design

Excellent ON resistance for higher DC current

Extremely Low Threshold Voltage

Small package SOT-23

WT1= Device Code

= Month (A~Z)

Marking

Applications

Order information

Driver for Relay, Solenoid, Motor, LED etc.

Device

Package

Shipping

3000/Reel&Tape

WPM2015-3/TR

SOT-23

DC-DC converter circuit

Power Switch

Load Switch

Charging

http://www.twtysemi.com

sales@twtysemi.com

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