Datasheet > WPM2015 (KPM2015)

WPM2015 (KPM2015)

更新时间： 2024-10-15 18:09:39

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
5页	1569K
描述
P-Channel MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

WPM2015 (KPM2015) 数据手册

浏览型号WPM2015 (KPM2015)的Datasheet PDF文件第2页

浏览型号WPM2015 (KPM2015)的Datasheet PDF文件第3页

浏览型号WPM2015 (KPM2015)的Datasheet PDF文件第4页

浏览型号WPM2015 (KPM2015)的Datasheet PDF文件第5页

SMD Type

MOSFET

P-Channel MOSFET

WPM2015 (KPM2015)

SOT-23

Unit: mm

+0.1

-0.1

2.9

0.4

+0.1

-0.1

■ Features

● VDS (V) =-20V

● ID =-2.4 A

+0.1

-0.1

+0.05

-0.01

0.95

0.1

● R^DS(ON)＜ 110mΩ (VGS =-4.5V)

● R^DS(ON)＜ 150mΩ (VGS =-2.5V)

● Supper high density cell design

+0.1

-0.1

1.9

1. Gate

2. Source

3. Drain

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Drain-Source Voltage

Symbol

10 S

Steady State

Unit

-20

VDS

Gate-Source Voltage

±8

Ta=25°C

Ta=70°C

Ta=25°C

Ta=70°C

Ta=25°C

Ta=70°C

Ta=25°C

Ta=70°C

-2.4

-1.9

0.9

-2.2

-1.7

0.8

0.5

-2

Continuous Drain Current

Power Dissipation

(Note.1)

0.5

-2.2

-1.7

0.7

Continuous Drain Current

(Note.2)

-1.6

0.6

0.4

Power Dissipation

(Note.2)

(Note.3)

0.5

Pulsed Drain Current

-10

(Note.1)

(Note.2)

135

155

190

Thermal Resistance.Junction- to-Ambient

thJA

160

℃/W

Thermal Resistance.Junction- to-Case

Junction Temperature

RthJC

150

260

Lead Temperature

℃

Junction Storage Temperature Range

-55 to 150

stg

Note.1: Surface mounted on FR-4 Board using 1 square inch pad size, 1oz copper

Note.2: Surface mounted on FR-4 board using minimum pad size, 1oz copper

Note.3: Pulse width<380μs, Duty Cycle<2%

www.kexin.com.cn

12 3 4 5

中文翻译

下载PDF

与WPM2015 (KPM2015)相关器件

型号	品牌	获取价格	描述	数据表
WPM2015-3	TYSEMI	获取价格	Single P-Channel, -20V, -2.4A, Power MOSFET Excellent ON resistance for higher DC current
WPM2015-3TR	TYSEMI	获取价格	Single P-Channel, -20V, -2.4A, Power MOSFET Excellent ON resistance for higher DC current
WPM2026	TYSEMI	获取价格	Single P-Channel, -20V, -3.2A, Power MOSFET Supper high density cell design
WPM2026-3	TYSEMI	获取价格	Single P-Channel, -20V, -3.2A, Power MOSFET Supper high density cell design
WPM2026-3TR	TYSEMI	获取价格	Single P-Channel, -20V, -3.2A, Power MOSFET Supper high density cell design
WPM2080	WILLSEMI	获取价格	MOSFET
WPM2083	WILLSEMI	获取价格	MOSFET
WPM2092A	WILLSEMI	获取价格	MOSFET
WPM2093	WILLSEMI	获取价格	MOSFET
WPM2301	WILLSEMI	获取价格	MOSFET