WNSC6D40650CW-A
Silicon Carbide Diode
Rev.01 - 30 May 2023
Product data sheet
1. General description
Dual Silicon Carbide Schottky diode in a
TO247 plastic package, designed for high
frequency switched-mode power supplies.
alogen-Free
RoHS
h
AEC - Q101 Qualified
2. Features and benefits
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New 6th Generation Technology
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Low Forward Voltage Drop
Low Reverse Leakage Current
High Forward Surge Capability IFSM
Reduced losses in associated MOSFET
Reduced EMI
Reduced cooling requirements
RoHS compliant
AEC-Q101 qualified
3. Applications
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Power factor correction
Telecom / Server SMPS
UPS
PV inverter
PC Silverbox
LED / OLED TV
Motor Drives
On board charger
4. Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
Notes
Values
Unit
Absolute maximum rating
VRRM
IO(AV)
Tj
repetitive peak reverse
voltage
650
40
V
A
limiting average forward δ = 0.5 ; square-wave pulse; Tmb ≤ 124 °C;
current
both diodes conducting; Fig. 1; Fig. 2; Fig. 3
junction temperature
-55 to 175
°C
Symbol Parameter
Static characteristics
Conditions
Notes Min
Typ
Max
Unit
VF
forward voltage
IF = 20 A; Tj = 25 °C; per diode; Fig. 5
IF = 20 A; Tj = 150 °C; per diode; Fig. 5
-
-
1.26
1.35
1.40
1.55
V
V
Dynamic characteristics
Qr recovered charge
IF = 20 A; dIF/dt = 500 A/μs; VR = 400 V;
Tj = 25 °C; per diode; Fig. 7
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48
-
nC