Datasheet > WNSC2M45065B7

WNSC2M45065B7

更新时间： 2024-10-15 18:09:15

品牌	Logo	应用领域
瑞能 - WEEN		/
页数	文件大小	规格书
14页	936K
描述
Silicon Carbide MOSFET in a TO263-7L plastic package, designed for high frequency, high efficiency systems.

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WNSC2M45065B7 数据手册

WNSC2M45065B7

N-Channel Silicon Carbide MOSFET

Rev.01 - 2 March 2024

Product data sheet

1. General description

Silicon Carbide MOSFET in a TO263-7L

plastic package, designed for high frequency,

high eﬃciency systems.

alogen-Free

RoHS

Lead-Free

2. Features and beneﬁts

•

Low on-resistance

•

Fast switching speed

0V turn-oﬀ gate voltage for simple gate drive

100% UIS Tested

Easy to parallel

Controllable dV/dt for optimized EMI

Reduced cooling requirements

RoHS compliant

3. Applications

•

Switch Mode Power Supplies

UPS

Battery formation instrument

Solar string inverter and solar optimizer

EV Charger

Motor Drives

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Notes

Values

Unit

Absolute maximum rating

V_DS

drain-source voltage

25 °C ≤ T_j≤ 175 °C

650

I_D

drain current

V_GS= 18 V; T_mb= 25 °C

P_tot

total power dissipation T_mb= 25 °C, T_j= 175 °C

484

T_j

junction temperature

-55 to 175

Typ

°C

Unit

Symbol

Parameter

Conditions

Notes Min

Max

Static characteristics

R_DS(on)drain-source on-state

resistance

V_GS= 15 V; I_D= 25 A; T_j= 25 °C

V_GS= 18 V; I_D= 25 A; T_j= 25 °C

mΩ

Dynamic characteristics

Q_G(tot)

Q_GD

total gate charge

gate-drain charge

I_D= 25 A; V_DS= 400 V; V_GS= -4 V/18 V;

T_j= 25 °C

Source-drain diode

Q_rrecovered charge

I_SD= 25 A; di/dt = 500 A/μs; V_DS= 400 V;

T_j= 25 °C

12 3 4 5 6 7...14

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