Datasheet > WNSC2M40120W

WNSC2M40120W

更新时间： 2024-06-27 12:11:04

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瑞能 - WEEN		/
页数	文件大小	规格书
14页	847K
描述
Silicon Carbide MOSFET in a TO247 plastic package, designed for high frequency, high efficiency systems.

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WNSC2M40120W 数据手册

WNSC2M40120W

N-Channel Silicon Carbide MOSFET

Rev.03 - 22 November 2023

Product data sheet

1. General description

Silicon Carbide MOSFET in a TO247 plastic

package, designed for high frequency, high

eﬃciency systems.

alogen-Free

RoHS

2. Features and beneﬁts

•

Low on-resistance

•

Fast switching speed

0V turn-oﬀ gate voltage for simple gate drive

100% UIS Tested

Easy to parallel

Controllable dV/dt for optimized EMI

Reduced cooling requirements

RoHS compliant

3. Applications

•

Switch Mode Power Supplies

UPS

Solar string inverter and solar optimizer

EV Charger

Motor Drives

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Notes

Values

Unit

Absolute maximum rating

V_DS

drain-source voltage

25 °C ≤ T_j≤ 175 °C

1200

70.4

336

I_D

drain current

V_GS= 18 V; T_mb= 25 °C

P_tot

total power dissipation T_mb= 25 °C, T_j= 175 °C

T_j

junction temperature

-55 to 175

°C

Unit

Symbol

Parameter

Conditions

Notes Min

Typ

Max

Static characteristics

R_DS(on)drain-source on-state

resistance

Dynamic characteristics

V_GS= 15 V; I_D= 33 A; T_j= 25 °C

mΩ

Q_G(tot)

Q_GD

total gate charge

gate-drain charge

I_D= 33 A; V_DS= 800 V; V_GS= -4 V/18 V;

T_j= 25 °C

115

Source-drain diode

Q_rrecovered charge

I_SD= 33 A; di/dt = 500 A/μs; V_DS= 400 V;

174

T_j= 25 °C

12 3 4 5 6 7...14

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