Datasheet > WNSC2M20120R

WNSC2M20120R

更新时间： 2024-06-27 12:11:04

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瑞能 - WEEN		/
页数	文件大小	规格书
14页	981K
描述
Silicon Carbide MOSFET in a TO247-4L plastic package, designed for high frequency, high efficiency systems.

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WNSC2M20120R 数据手册

WNSC2M20120R

N-Channel Silicon Carbide MOSFET

Rev.02 - 24 November 2023

Product data sheet

1. General description

Silicon Carbide MOSFET in a TO247-4L

plastic package, designed for high frequency,

high eﬃciency systems.

alogen-Free

RoHS

Lead-Free

2. Features and beneﬁts

•

Separate driver source pin

•

Low on-resistance

Fast switching speed

0V turn-oﬀ gate voltage for simple gate drive

100% UIS Tested

Easy to parallel

Controllable dV/dt for optimized EMI

Reduced cooling requirements

RoHS compliant

3. Applications

•

Switch Mode Power Supplies

UPS

Solar string inverter and solar optimizer

EV Charger

Motor Drives

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Notes

Values

Unit

Absolute maximum rating

V_DS

drain-source voltage

drain current

25 °C ≤ T_j≤ 175 °C

1200

158.6

833

I_D

V_GS= 18 V; T_mb= 25 °C

P_tot

total power dissipation T_mb= 25 °C, T_j= 175 °C

T_j

junction temperature

-55 to 175

Typ

°C

Unit

Symbol

Parameter

Conditions

Notes Min

Max

Static characteristics

R_DS(on)drain-source on-state

resistance

Dynamic characteristics

V_GS= 15 V; I_D= 50 A; T_j= 25 °C

mΩ

Q_G(tot)

Q_GD

total gate charge

gate-drain charge

I_D= 50 A; V_DS= 800 V; V_GS= -4 V/18 V;

T_j= 25 °C

215

Source-drain diode

Q_rrecovered charge

I_SD= 50 A; di/dt = 500 A/μs; V_DS= 400 V;

276

T_j= 25 °C

12 3 4 5 6 7...14

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