Datasheet > WNSC2M1K0170J

WNSC2M1K0170J

更新时间： 2024-06-27 12:11:04

品牌	Logo	应用领域
瑞能 - WEEN		/
页数	文件大小	规格书
14页	791K
描述
Silicon Carbide MOSFET in a 3-lead TO3PF plastic package, designed for high frequency, high efficiency systems.

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WNSC2M1K0170J 数据手册

WNSC2M1K0170J

N-Channel Silicon Carbide MOSFET

Rev.01 - 03 April 2024

Product data sheet

1. General description

Silicon Carbide MOSFET in a TO3PF plastic

package, designed for high frequency, high

eﬃciency systems.

alogen-Free

RoHS

2. Features and beneﬁts

•

Optimized for ﬂy-back topologies

•

15V/0V gate-source voltage compatible with ﬂy-back controllers

100% UIS Tested

Controllable dV/dt for optimized EMI

Reduced cooling requirements

Enlarge creepage distance

•

RoHS compliant

3. Applications

•

Auxiliary Power Supplies

Switch Mode Power Supplies

Solar Inverter

Frequency converter

Industrial power supply

4. Quick reference data

Table 1. Quick reference data

Symbol Parameter

Conditions

Notes

Values

Unit

Absolute maximum rating

V_DS

I_D

drain-source voltage

drain current

25 °C ≤ T_j≤ 175 °C

V_GS= 18 V; T_mb= 25 °C

T_mb= 25 °C

1700

4.6

P_tot

T_j

total power dissipation

junction temperature

-55 to 175

Typ

°C

Unit

Symbol Parameter

Static characteristics

Conditions

Notes Min

Max

R_DS(on)

drain-source on-state

resistance

V_GS= 15 V; I_D= 1 A; T_j= 25 °C

1000

mΩ

Dynamic characteristics

Q_G(tot)

Q_GD

total gate charge

gate-drain charge

I_D= 2 A; V_DS= 1200 V; V_GS= 0 V/18 V;

T_j= 25 °C

Source-drain diode

Q_rrecovered charge

I_SD= 1 A; di/dt = 500 A/μs; V_DS= 400 V;

T_j= 25 °C

12 3 4 5 6 7...14

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