Datasheet > WNMD2188

WNMD2188

更新时间： 2024-04-09 18:58:50

品牌	Logo	应用领域
韦尔 - WILLSEMI		/
页数	文件大小	规格书
10页	958K
描述
MOSFET

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WNMD2188 数据手册

WNMD2188

Dual N-Channel, 12V, 13.7A, Power MOSFET

https://www.omnivision-group.com

sss

(V)

Max R

(mΩ)

ss(on)

2.95@ V_GS=4.5V

3.20@ V_GS=3.8V

3.95@ V_GS=3.1V

6.10@ V_GS=2.5V

ESD Rating:2000V HBM

1,2,4,5=Source1(FET1)

6,7,9,10=Source2(FET2)

3=Gate1 (FET1)

8=Gate2 (FET2)

Descriptions

CSP-10L (Top view)

The WNMD2188 is Dual N-Channel enhancement

MOS Field Effect Transistor and connecting the Drains

on the circuit board is not required because the Drains

of the MOSFET1 and the MOSFET2 are internally

connected. Uses advanced trench technology and

design to provide excellent R_SS(ON)with low gate charge.

This device is designed for Lithium-Ion battery

protection circuit. The WNMD2188 is available in CSP-

10L package. Standard Product WNMD2188 is Pb-free

and Halogen-free.

MOSFET2

MOSFET1

Pin Configuration

Features



Trench Technology

Supper high density cell design

Excellent ON resistance for higher DC current

Extremely Low Threshold Voltage

Common-drain type

2188 = Device Code

ND = Special Code

Y = Year

W = Week

Marking

Small package CSP-10L

Order information

Applications

Device

Package

Shipping

WNMD2188-10/TR

CSP-10L

3000/Reel&Tape



Lithium-Ion battery protection circuit

Will Semiconductor Ltd.

2021/12/03-Rev.1.0

12 3 4 5 6 7...10

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