Datasheet > WNMD2162A

WNMD2162A

更新时间： 2024-04-09 18:59:34

品牌	Logo	应用领域
韦尔 - WILLSEMI		/
页数	文件大小	规格书
7页	1089K
描述
MOSFET

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WNMD2162A 数据手册

WNMD2162A

Http://www.sh-willsemi.com

Dual N-Channel, 20V, 4.8A, Power MOSFET

V_DS(V)

Rds(on) (Ω)

0.014@ V_GS=4.5V

0.015@ V_GS=3.1V

0.016@ V_GS=2.5V

ESD Protected

PDFN2.9×2.8-8L

Descriptions

The

WNMD2162A

Dual

N-Channel

enhancement MOS Field Effect Transistor. Uses

advanced trench technology and design to provide

excellent R_{DS (ON)}with low gate charge. This device is

suitable for use in DC-DC conversion, power switch

and charging circuit. Standard Product WNMD2162A

is Pb-free and Halogen-free.

Pin configuration (Top view)

Features



Trench Technology

2162A

YYWW

Supper high density cell design

Excellent ON resistance for higher DC current

Extremely Low Threshold Voltage

Small package PDFN2.9×2.8-8L

2162A = Device Code

= Year

= Week

Marking

Applications

Order information



Driver for Relay, Solenoid, Motor, LED etc.

Device

WNMD2162A-8/TR

Package

Shipping

DC-DC converter circuit

Power Switch

Load Switch

PDFN

3000/Reel&Tape

2.9×2.8-8L

Charging

Will Semiconductor Ltd.

Jan, 2015 - Rev.1.1

12 3 4 5 6 7

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