Datasheet > WNMD2160A

WNMD2160A

更新时间： 2024-04-09 18:59:41

品牌	Logo	应用领域
韦尔 - WILLSEMI		/
页数	文件大小	规格书
8页	828K
描述
MOSFET

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数据手册

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WNMD2160A 数据手册

WNMD2160A

Dual N-Channel, 20V, 6.6A, Power MOSFET

Http://www.sh-willsemi.com

V_DS(V)

Rds(on) (mΩ)

15.8@ V_GS=4.5V

16.2@ V_GS=3.8V

17.5@ V_GS=3.1V

19.6@ V_GS=2.5V

ESD Rating：2000V HBM

SOT-23-6L

Descriptions

The WNMD2160A is N-Channel enhancement MOS

Field Effect Transistor. Uses advanced trench

technology and design to provide excellent R_{DS (ON)}

with low gate charge. This device is suitable for use in

DC-DC conversion, power switch and charging circuit.

Standard Product WNMD2160A is Pb-free.

Pin configuration (Top view)

Features



Trench Technology

2160

Supper high density cell design

Excellent ON resistance for higher DC current

Extremely Low Threshold Voltage

NDYW

2160 = Device Code

= Special Code

= Year

= Week (A~z)

Applications

Marking



Driver for Relay, Solenoid, Motor, LED etc.

Order information

DC-DC converter circuit

Power Switch

Load Switch

Device

Package

Shipping

3000/Reel&Tape

WNMD2160A-6/TR

SOT-23-6L

Charging

Will Semiconductor Ltd.

Jan, 2020- Rev.1.0

12 3 4 5 6 7 8

中文翻译

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