Datasheet > WNMD2153A

WNMD2153A

更新时间： 2024-04-09 18:59:15

品牌	Logo	应用领域
韦尔 - WILLSEMI		/
页数	文件大小	规格书
8页	1099K
描述
MOSFET

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中文翻译

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数据手册

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WNMD2153A 数据手册

WNMD2153A

Http://www.sh-willsemi.com

Dual N-Channel, 20V, 0.5A, Power MOSFET

V_DS(V)

Max R_DS(on)(mΩ)

550 @ V_GS=4.5V

710 @ V_GS=3.1V

900 @ V_GS=2.5V

1400 @ V_GS=1.8V

ESD Rating：2000V HBM

SOT-363

Description

The WNMD2153A is N-Channel enhancement MOS

Field Effect Transistor. Uses advanced trench

technology and design to provide excellent R_DS(ON)with

low gate charge. This device is suitable for use in

DC-DC conversion, power switch and charging circuit.

Standard Product WNMD2153A is Pb-free.

Pin configuration (Top view)

Features



Trench Technology

Supper high density cell design

Excellent ON resistance

Extremely Low Threshold Voltage

Small package SOT-363

MF = Device Code

= Month (A~Z)

Marking

Applications

Order information



DC/DC converters

Device

Package

Shipping

Power supply converters circuit

WNMD2153A-6/TR

SOT-363

3000/Tape&Reel

Load/Power Switching for portable device

Will Semiconductor Ltd.

Aug,2020- Rev.1.0

12 3 4 5 6 7 8

中文翻译

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