Datasheet > WNM3057B

WNM3057B

更新时间： 2024-04-09 18:58:52

品牌	Logo	应用领域
韦尔 - WILLSEMI		/
页数	文件大小	规格书
8页	838K
描述
MOSFET

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数据手册

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WNM3057B 数据手册

WNM3057B

Single N-Channel, 30V, 80A, Power MOSFET

http://www.omnivision-group.com/

V_DS(V)

Max. R_DS(on)(mΩ)

4.4 @ V_GS=10V

6.3 @ V_GS=4.5V

Descriptions

PDFN3333-8L

The WNM3057B is N-Channel enhancement MOS

Field Effect Transistor. Uses advanced trench

technology and design to provide excellent R_DS(ON)

with low gate charge. This device is suitable for use

in DC-DC conversion, power switch and charging

circuit. Standard Product WNM3057B is in

compliance with RoHS.

Pin configuration (Top view)

Features

3057

VBYW



Trench Technology

Supper high density cell design

Excellent ON resistance

3057

=Device Code

= Special Code

= Year

Extremely Low Threshold Voltage

Small package PDFN3333-8L

= Week(A~z)

Marking

Applications

Order information

Package



DC/DC converters

Device

Shipping

Power supply converters circuit

WNM3057B-8/TR PDFN3333-8L 5000/Tape&Reel

Load/Power Switching for portable device

Will Semiconductor Ltd.

2022/6/24- Rev.1.1

12 3 4 5 6 7 8

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