Datasheet > WNM3038

WNM3038

更新时间： 2024-04-09 18:59:38

品牌	Logo	应用领域
韦尔 - WILLSEMI		/
页数	文件大小	规格书
8页	435K
描述
MOSFET

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WNM3038 数据手册

WNM3038

https://www.omnivision-group.com

SingleN-Channel, 30V, 22A, Power MOSFET

V_DS(V)

Typical R_DS(on)(mΩ)

6.0 @ V_GS=10V

8.5 @ V_GS=4.5V

PDFN3333-8L

Description

The WNM3038 is N-Channel enhancement MOS Field

Effect Transistor. Uses advanced trench technology and

design to provide excellent R_DS(ON)with low gate charge.

This device is suitable for use in DC-DC conversion,

power switch and charging circuit. Standard Product

WNM3038 is Pb-free.

Pin configuration (Top view)

Features



Trench Technology

Supper high density cell design

Excellent ON resistance

Extremely Low Threshold Voltage

Small package PDFN3333-8L

3038 =Device Code

=Special Code

= Year

= Week(A~z)

Marking

Applications

Order information



DC/DC converters

Device

Package

Shipping

Power supply converters circuit

WNM3038-8/TR PDFN3333-8L 5000/Tape&Reel

Load/Power Switching for portable device

Will Semiconductor Ltd.

2022/6/24- Rev.1.3

12 3 4 5 6 7 8

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