Datasheet > WNM3019

WNM3019

更新时间： 2024-04-09 18:59:11

品牌	Logo	应用领域
韦尔 - WILLSEMI		/
页数	文件大小	规格书
8页	1492K
描述
MOSFET

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中文翻译

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数据手册

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WNM3019 数据手册

WNM3019

Http://www.sh-willsemi.com

Small Signal N-Channel, 50V, 0.2A, MOSFET

V_DS(V)

Typical Rds(on) (Ω)

1.2@ V_GS=10V

1.4@ V_GS=4.5V

1.9@ V_GS=2.5V

5.4@ V_GS=1.8V

ESD Rating: 2000V HBM

Descriptions

The WNM3019 is N-Channel enhancement MOS

Field Effect Transistor. Uses advanced trench

technology and design to provide excellent R_{DS (ON)}

with low gate charge. This device is suitable for use

in small signal switch. Standard Product WNM3019

is Pb-free and Halogen-free.

Pin configuration (Top view)

Features



Trench Technology

Supper high density cell design

Excellent ON resistance for higher DC current

HBM ESD protection >2 kV

Small package SOT-523

19 = Device Code

* = Month (A~Z)

Marking

Order information

Applications

Device

WNM3019-3/TR

Package

Shipping



Driver: Relay, Solenoid, Lamps,Hammers etc.

SOT-523 3000/Reel&Tape

Power supply converters circuit

Load/Power Switching for potable device

Will Semiconductor Ltd.

Jan.2018 – Rev. 1.1

12 3 4 5 6 7 8

中文翻译

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