Datasheet > WNM2046

WNM2046

更新时间： 2024-06-27 12:12:15

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
5页	381K
描述
N-Channel MOSFET

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中文翻译

获取价格

数据手册

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WNM2046 数据手册

SMD Type

MOSFET

Transistors

N-Channel MOSFET

WNM2046

Uint: mm

SOT-923

■Features

● VDS (V) = 20V

● ID = 0.71 A

● R^DS(ON)< 0.42Ω (VGS = 4.5V)

● R^DS(ON)< 0.500Ω (VGS = 2.5V)

● R^DS(ON)< 0.60Ω (VGS = 1.8V)

0.75

0.85

0.90

0.35

0.43

1.10

7º REF.

Drain

1. Gate

2. Source

3. Drain

7º REF.

Gate

Source

■Absolute Maximum Ratings

Parameter

Symbol

10 S

Steady State

Unit

Drain-Source Voltage

Gate-Source Voltage

VDS

±5

0.71

0.57

0.32

0.20

0.67

0.54

0.28

0.18

0.66

0.52

0.27

0.17

0.62

0.50

0.24

0.15

A=25℃

A=70℃

A=25℃

A=70℃

A=25℃

A=70℃

A=25℃

A=70℃

Continuous Drain Current ^{a d}

Maximum Power Dissipation ^{a d}

Continuous Drain Current ^{b d}

Maximum Power Dissipation ^{b d}

1.4

Pulsed Drain Current

Thermal Resistance.Junction- to-Ambient ^a

Thermal Resistance.Junction- to-Ambient ^b

Thermal Resistance.Junction- to-Case

Junction Temperature

thJA

thJC

390

435

455

505

280

℃/W

150

℃

Storage Temperature Range

-55 to 150

stg

a. Surfacemounted on FR4 Board using 1square inchpad size, 1ozcopper

b. Surface mounted on FR4 board using minimum pad size, 1oz copper

c. Pulse width<380μs, Single pulse

d. Maximum junction temperature T

J=150°C.

e. Pulse test: Pulse width <380 us duty cycle <2%.

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