Datasheet > WNM2016

WNM2016

更新时间： 2024-10-15 18:09:43

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科信 - KEXIN		/
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描述
N-Channel MOSFET

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中文翻译

获取价格

数据手册

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WNM2016 数据手册

SMD Type

MOSFET

Transistors

N-Channel MOSFET

WNM2016

SOT-23

Unit : mm

+0.1

-0.1

■Features

2.9

0.4

+0.1

-0.1

● VDS (V) =20 V

●

ID = 3.2 A

● R^DS(ON)< 47m Ω @ VGS = 4.5 V

● R^DS(ON)< 55m Ω @ VGS = 2.5 V

● R^DS(ON)< 66m Ω @ VGS = 1.8 V

+0.1

+0.05

-0.01

0.95

-0.1

0.1

+0.1

-0.1

1.9

1. Gate

2. Source

3. Drain

■Absolute Maximum Ratings

TA = 25℃unless otherwise noted

Parameter

Symbol

10 S

Steady State

Unit

Drain-Source Voltage

Gate-Source Voltage

±8

VDS

3.2

2.5

0.8

0.5

2.9

2.3

0.6

0.4

2.9

2.3

0.7

0.4

2.7

2.1

0.5

0.3

A=25℃

A=70℃

A=25℃

A=70℃

A=25℃

A=70℃

A=25℃

A=70℃

= 150 °C) ^a

Continuous Drain Current (T

Maximum Power Dissipation ^a

= 150 °C) ^b

Continuous Drain Current (T

Maximum Power Dissipation ^b

Pulsed Drain Current

Thermal Resistance.Junction- to-Ambient ^a

Thermal Resistance.Junction- to-Ambient ^b

Junction-to-Case Thermal Resistance

Junction Temperature

thJA

thJC

150

180

175

210

℃/W

150

℃

Storage Temperature Range

Notes:

-55 to 150

stg

a Surface mounted on FR4 Board using 1 in sq pad size, 1oz Cu.

b Surface mounted on FR4 board using the minimum recommended pad size, 1oz Cu.

c Repetitive rating, pulse width limited by junction temperature, tp=10μs, Duty Cycle=1%

d Repetitive rating, pulse width limited by junction temperature T^J(MAX)=150°C.

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