Datasheet > WN3S3060D

WN3S3060D

更新时间： 2024-11-15 17:01:51

品牌	Logo	应用领域
瑞能 - WEEN		/
页数	文件大小	规格书
11页	456K
描述
Power Schottky diode in TO252 (DPAK) surface-mountable plastic package.

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WN3S3060D 数据手册

WN3S3060D

Power Schottky diode

Rev.01 - 14 November 2022

Product data sheet

1. General description

Power Schottky diode in TO252 (DPAK)

surface-mountable plastic package.

alogen-Free

RoHS

2. Features and beneﬁts

•

Trench structure

High junction temperature up to 150°C

Low forward voltage drop, negligible switching losses

•

High eﬃciency

3. Applications

•

DC to DC converters

Freewheeling diode

OR-ing diode

Switched mode power supply rectiﬁer

4. Quick reference data

Table 1. Quick reference data

Symbol Parameter

Conditions

Notes

Values

Unit

Absolute maximum rating

V_RRM

repetitive peak reverse

voltage

I_F(AV)

average forward current δ = 0.5 ; square-wave pulse; T_mb≤ 90 °C;

Fig. 1; Fig. 2; Fig. 3

Symbol Parameter

Static characteristics

Conditions

Notes Min

Typ

Max

Unit

V_F

I_R

forward voltage

reverse current

I_F= 30 A; T_j= 25 °C; Fig. 6

V_R= 60 V; T_j= 25 °C

0.78

0.85

200

μA

12 3 4 5 6 7...11

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