Datasheet > WMSC030H12B1P

WMSC030H12B1P

更新时间： 2024-06-27 12:11:04

品牌	Logo	应用领域
瑞能 - WEEN		/
页数	文件大小	规格书
15页	983K
描述
WeEnPACK-B1 module with WeEn 1200V Gen2 SiC MOSFET and PressFit pin type. Intergrated with NTC temperature sensor

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WMSC030H12B1P 数据手册

WMSC030H12B1P

N-Channel Silicon Carbide MOSFET Module

Rev.01 - 5 February 2024

Product data sheet

1. General description

WeEnPACK-B1 module with WeEn 1200V

Gen2 SiC MOSFET and PressFit pin type.

Intergrated with NTC temperature sensor.

alogen-Free

RoHS

2. Features and beneﬁts

•

Half bridge topology

•

PressFit pins technology

Low R_DSon

Low Switching Losses

Low Q_gand C_rss

Low Inductive Design

3. Applications

•

Power inverters

AC-DC converters

DC-DC converters

Active power factor correctors

Motor drivers

4. Quick reference data

Table 1. Quick reference data

Symbol Parameter

Conditions

Notes

Values

Unit

Absolute maximum rating

V_DS

I_D

drain-source voltage

drain current

T_j= 25 °C

1200

V_GS= 18 V; T_h= 25 °C

T_h= 25 °C

P_tot

T_j

total power dissipation

junction temperature

111

-40 to 150

Typ

°C

Unit

Symbol Parameter

Static characteristics

Conditions

Notes Min

Max

R_DS(on)

drain-source on-state

resistance

V_GS= 15 V; I_D= 45 A; T_j= 25 °C

V_GS= 18 V; I_D= 45 A; T_j= 25 °C

mΩ

Dynamic characteristics

Q_G(tot)

Q_GD

total gate charge

gate-drain charge

I_D= 45 A; V_DS= 800 V; V_GS= -4 V/18 V;

T_j= 25 °C

162

Source-drain diode

Q_rrecovered charge

I_SD= 45 A; V_GS= -4 V; di/dt = 8500 A/μs;

592

V_R= 600 V; T_j= 25 °C

12 3 4 5 6 7...15

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