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WMS512K8L-100DEIEA PDF预览

WMS512K8L-100DEIEA

更新时间: 2023-02-15 00:00:00
品牌 Logo 应用领域
美高森美 - MICROSEMI 静态存储器
页数 文件大小 规格书
7页 587K
描述
Standard SRAM, 512KX8, 100ns, CMOS, CDSO32, SOJ-32

WMS512K8L-100DEIEA 技术参数

生命周期:Active包装说明:SOJ,
Reach Compliance Code:compliant风险等级:5.56
Is Samacsys:N最长访问时间:85 ns
JESD-30 代码:R-CDSO-J32长度:21.1 mm
内存密度:4194304 bit内存集成电路类型:STANDARD SRAM
内存宽度:8功能数量:1
端子数量:32字数:524288 words
字数代码:512000工作模式:ASYNCHRONOUS
最高工作温度:125 °C最低工作温度:-55 °C
组织:512KX8封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装代码:SOJ封装形状:RECTANGULAR
封装形式:SMALL OUTLINE并行/串行:PARALLEL
座面最大高度:3.96 mm最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:MILITARY端子形式:J BEND
端子节距:1.27 mm端子位置:DUAL
Base Number Matches:1

WMS512K8L-100DEIEA 数据手册

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WMS512K8-XXX  
512Kx8, MONOLITHIC SRAM, SMD 5962-95613  
FEATURES  
 Access Times 70, 85, 100, 120ns  
 MIL-STD-883 Compliant Devices Available  
 Evolutionary, Corner Power/Ground Pinout JEDEC Approved  
• 32 pin Ceramic DIP (Package 300)  
• 32 lead Ceramic SOJ (Package 101)  
 Commercial, Industrial and Military Temperature Ranges  
 5V Power Supply  
 Low Power CMOS  
 Low Power Data Retention  
 TTL Compatible Inputs and Outputs  
EVOLUTIONARY PINOUT  
PIN DESCRIPTION  
32 DIP  
A0-18  
Address Inputs  
Data Input/Output  
Chip Select  
32 CSOJ (DE)  
I/O0-7  
CS#  
TOP VIEW  
OE#  
WE#  
VCC  
Output Enable  
Write Enable  
+5.0V Power  
Ground  
GND  
A18  
A16  
A14  
A12  
A7  
A6  
A5  
A4  
A3  
1
2
3
4
5
6
7
8
9
32 VCC  
31 A15  
30 A17  
29 WE#  
28 A13  
27 A8  
26 A9  
25 A11  
24 OE#  
23 A10  
22 CS#  
21 I/O7  
20 I/O6  
19 I/O5  
18 I/O4  
17 I/O3  
A2 10  
A1 11  
A0 12  
I/O0 13  
I/O1 14  
I/O2 15  
GND 16  
Microsemi Corporation reserves the right to change products or specications without notice.  
February 2011 © 2011 Microsemi Corporation. All rights reserved.  
Rev. 5  
1
Microsemi Corporation • (602) 437-1520 • www.microsemi.com  

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