是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | DIP, | Reach Compliance Code: | unknown |
ECCN代码: | 3A991.B.2.A | HTS代码: | 8542.32.00.41 |
风险等级: | 5.62 | 最长访问时间: | 85 ns |
JESD-30 代码: | R-CDIP-T32 | JESD-609代码: | e0 |
内存密度: | 4194304 bit | 内存集成电路类型: | STANDARD SRAM |
内存宽度: | 8 | 功能数量: | 1 |
端子数量: | 32 | 字数: | 524288 words |
字数代码: | 512000 | 工作模式: | ASYNCHRONOUS |
最高工作温度: | 85 °C | 最低工作温度: | -40 °C |
组织: | 512KX8 | 封装主体材料: | CERAMIC, METAL-SEALED COFIRED |
封装代码: | DIP | 封装形状: | RECTANGULAR |
封装形式: | IN-LINE | 并行/串行: | PARALLEL |
峰值回流温度(摄氏度): | NOT SPECIFIED | 认证状态: | Not Qualified |
座面最大高度: | 5.13 mm | 最大供电电压 (Vsup): | 5.5 V |
最小供电电压 (Vsup): | 4.5 V | 标称供电电压 (Vsup): | 5 V |
表面贴装: | NO | 技术: | CMOS |
温度等级: | INDUSTRIAL | 端子面层: | TIN LEAD |
端子形式: | THROUGH-HOLE | 端子节距: | 2.5 mm |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
WMS512K8-85CM | MERCURY |
获取价格 |
Standard SRAM, 512KX8, 85ns, CMOS, CDIP32, 0.600 INCH, SINGLE CAVITY, SIDE BRAZED, CERAMIC | |
WMS512K8-85CME | WEDC |
获取价格 |
Standard SRAM, 512KX8, 85ns, CMOS, CDIP32, 0.600 INCH, SINGLE CAVITY, SIDE BRAZED, CERAMIC | |
WMS512K8-85CME | MERCURY |
获取价格 |
Standard SRAM, 512KX8, 85ns, CMOS, CDIP32, 0.600 INCH, SINGLE CAVITY, SIDE BRAZED, CERAMIC | |
WMS512K8-85CMEA | WEDC |
获取价格 |
Standard SRAM, 512KX8, 85ns, CMOS, CDIP32, 0.600 INCH, SINGLE CAVITY, SIDE BRAZED, CERAMIC | |
WMS512K8-85CMEA | MERCURY |
获取价格 |
Standard SRAM, 512KX8, 85ns, CMOS, CDIP32, 0.600 INCH, SINGLE CAVITY, SIDE BRAZED, CERAMIC | |
WMS512K8-85CQ | MICROSEMI |
获取价格 |
Standard SRAM, 512KX8, 85ns, CMOS, CDIP32, 0.600 INCH, SINGLE CAVITY, SIDE BRAZED, CERAMIC | |
WMS512K8-85DEC | MERCURY |
获取价格 |
Standard SRAM, 512KX8, 85ns, CMOS, CDSO32, | |
WMS512K8-85DECE | MERCURY |
获取价格 |
Standard SRAM, 512KX8, 85ns, CMOS, CDSO32, CERAMIC, SOJ-32 | |
WMS512K8-85DECEA | WEDC |
获取价格 |
Standard SRAM, 512KX8, 85ns, CMOS, CDSO32, CERAMIC, SOJ-32 | |
WMS512K8-85DEI | MERCURY |
获取价格 |
Standard SRAM, 512KX8, 85ns, CMOS, CDSO32, CERAMIC, SOJ-32 |