Datasheet > WMBTA42

WMBTA42

更新时间： 2024-11-07 22:13:51

品牌	Logo	应用领域
永盛 - Wing Shing		晶体晶体管
页数	文件大小	规格书
1页	82K
描述
NPN EPITAXIAL SILICON TRANSISTORS

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数据手册

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WMBTA42 数据手册

NPN EPITAXIAL SILICON TRANSISTORS

WMBTA42

SOT——23

High Voltage Transistor

Die Size 0.6*0.6mm

Power Dissipation: 225mW

1. BASE

Collector Current: Max. 500mA

Bonding Pad Size

Emitoe 100*100mkm

Base 100*100mkm

2. EMITTER

3. COLLECTOR

GUARANTEED PROBED CHARACTERISTICS (T_A=25℃)

Limits

Characteristic

Symbol

Test Conditions

I_C=1.0mA

Units

Min Typ Max

Collector-emitter

Breakdown Voltage

300

CEO

Collector-Base

Breakdown Voltage

V_CBOI_C=100uA

Collector Cut-off

Current

I_CBO

I_EBO

V_CB=260V

100

Emitter Cut-off

Current

V_EB=6V

100

V_CE=10V, I_C=1mA

V_CE=10V, I_C=10mA

V_CE=10V, I_C=30mA

DC Current Gain

h_FE

Base-Emitter

Saturation Voltage

0.90

V_BEsatI_C=20mA, I_b=2mA

Collector-Emitter

Saturation Voltage

V_CEsatI_C=20mA, I_B=2mA

0.35

Transition

Frequency

V_CE=20V,

f_r

MHz

I_C=10mA,f=10MHz

Collector-Base

Capacitance

C_cb

V_CB=20V, f=1MHz

3.0

NOTES: Due to probe testing limitations, only the DC parameters are tested.

Wing Shing Computer Components Co., (H.K.)Ltd.

Homepage: http://www.wingshing.com

Tel:(852)2341 9276 Fax:(852)2797 8153

E-mail: wsccltd@hkstar.com

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